General Purpose NPN Transistor LRC L9013QLT1G Designed for Automotive and Electronic Control Systems
Key Attributes
Model Number:
L9013QLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L9013QLT1G
Package:
SOT-23
Product Description
Product Overview
The L9013QLT1G and S-L9013QLT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
Technical Specifications
| Parameter | Symbol | L9013QLT1G | S-L9013QLT1G | Unit | Notes | |
| Maximum Ratings | VCEO | 20 | 20 | V | ||
| VCBO | 40 | 40 | V | |||
| VEBO | 5 | 5 | V | |||
| IC | 500 | 500 | mA | |||
| PD | 300 | 300 | mW | Ta = 25C | ||
| Thermal Characteristics | Total Device Dissipation (FR-5 Board) | 556 | mW | @ TA = 25C | ||
| Derate above 25C (FR-5 Board) | 1.8 | mW/ | ||||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 417 | /W | |||
| Total Device Dissipation (Alumina Substrate) | 225 | mW | @ TA = 25C | |||
| Derate above 25C (Alumina Substrate) | 0.9 | mW/ | ||||
| Junction and Storage Temperature | TJ,Tstg | -55+150 | -55+150 | |||
| Electrical Characteristics (Ta= 25C) | Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | 20 | Vdc | (IC =1.0mA) |
| Collector-Base Breakdown voltage | V(BR)CBO | 40 | 40 | Vdc | (IC = 100A) | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | 5 | Vdc | (IE = 100A) | |
| Collector Cutoff Current | ICBO | - | - | nA | (VCB = 35 V) | |
| Emitter Cutoff Current | IEBO | - | - | nA | (VEB = 4V) | |
| DC Current Gain | HFE | 150-300 | 150-300 | (IC =50mA, VCE =1V) | ||
| Collector-Emitter Saturation Voltage | VCE(S) | - | - | Vdc | (IC =500mA,IB =50mA) |
1809301823_LRC-L9013QLT1G_C78553.pdf
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