automotive transistor LRC S-LMBT5551LT1G with AEC Q101 certification RoHS compliant and Halogen Free design
Key Attributes
Model Number:
S-LMBT5551LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT5551LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT5551LT1G and S-LMBT5551LT1G are high voltage transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Certifications: RoHS, Halogen Free, AEC-Q101 (S- prefix)
- Material Compliance: RoHS requirements, Halogen Free
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
| MAXIMUM RATINGS (Ta = 25C) | ||||
| Collector current--Continuous | IC | 180 | mA | |
| Collector-Emitter Voltage | VCEO | 160 | V | |
| Collector-Base voltage | VCBO | 180 | V | |
| Emitter-Base Voltage | VEBO | 6.0 | V | |
| Total Device Dissipation, FR5 Board | PD | 225 | mW | @ TA = 25C; Derate above 25C: 1.8 mW/ |
| Thermal Resistance, JunctiontoAmbient (FR-5 Board) | RJA | 417 | /W | FR5 = 1.00.750.062 in. |
| Total Device Dissipation, Alumina Substrate | PD | 556 | mW | @ TA = 25C; Derate above 25C: 2.4 mW/ |
| Thermal Resistance, JunctiontoAmbient (Alumina Substrate) | RJA | 1.8 | /W | Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. |
| Junction and Storage temperature | TJ,Tstg | 55+150 | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | (IC = 1.0 mA, IB = 0) |
| Collector-Base Breakdown voltage | V(BR)CBO | 180 | V | (IC = 100A, IE = 0) |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | V | (IE = 10 A, IC = 0) |
| Collector Cutoff Current | ICBO | 50 | nA | (VCB = 120 V, IE = 0) |
| Collector Cutoff Current @ 100C | ICBO | 100 | nA | (VCB = 120 V, IE = 0, TA = 100C) |
| Emitter Cutoff Current | IEBO | 50 | nA | (VEB = 4.0 V, IC = 0) |
| Collector Emitter Cut-off Current | ICES | 100 | nA | (VCB = 120 V) |
| DC Current Gain | HFE | 80-250 | (IC = 1.0 mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | 100-300 | (IC = 10 mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | 80-150 | (IC = 50 mA, VCE = 5.0 V) | |
| Collector-Emitter Saturation Voltage | VCE(S) | 0.2 | V | (IC = 10 mA, IB = 1.0 mA) |
| Collector-Emitter Saturation Voltage | VCE(S) | 0.15 | V | (IC = 50 mA, IB = 5.0 mA) |
| Base-Emitter Saturation Voltage | VBE(S) | 1.0 | V | (IC = 10 mA, IB = 1.0 mA) |
| Base-Emitter Saturation Voltage | VBE(S) | 1.1 | V | (IC = 50 mA, IB = 5.0 mA) |
| DEVICE MARKING AND ORDERING INFORMATION | ||||
| Part Number | Marking | Package | Quantity | Notes |
| LMBT5551LT1G | G1 | SOT23 | 3000/Tape&Reel | |
| LMBT5551LT3G | G1 | SOT23 | 10000/Tape&Reel | |
| S-LMBT5551LT1G | S-LMBT5551LT1G | SOT23 | 3000/Tape&Reel | AEC-Q101 qualified and PPAP capable. |
2410010101_LRC-S-LMBT5551LT1G_C2936715.pdf
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