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quality SOT23 Package PNP Silicon Transistor LRC S-LDTB123YLT1G for Inverter Interface and Driver Circuit Integration factory
quality SOT23 Package PNP Silicon Transistor LRC S-LDTB123YLT1G for Inverter Interface and Driver Circuit Integration factory

SOT23 Package PNP Silicon Transistor LRC S-LDTB123YLT1G for Inverter Interface and Driver Circuit Integration

Key Attributes
Model Number: S-LDTB123YLT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV@50mA,2.5mA
Input Resistor:
2.2kΩ
Resistor Ratio:
4.5
Mfr. Part #:
S-LDTB123YLT1G
Package:
SOT-23
Product Description

Product Overview

The LDTB123YLT1G and LDTB123YLT3G are PNP Silicon Surface Mount Transistors featuring monolithic bias resistor networks. These transistors are designed for inverter, interface, and driver applications. Their integrated bias resistors simplify circuit configuration by eliminating the need for external input resistors, offering advantages such as positive input biasing and minimized parasitic effects. The devices are easy to implement, requiring only the setting of on/off conditions for operation.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix models)
  • Package Type: SOT-23

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping Description
LDTB123YLT1G F52 2.2 10 3000/Tape & Reel Inverter, Interface, Driver
LDTB123YLT3G F52 2.2 10 10000/Tape & Reel Inverter, Interface, Driver
S-LDTB123YLT1G F52 2.2 10 3000/Tape & Reel Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
S-LDTB123YLT3G F52 2.2 10 10000/Tape & Reel Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Parameter Symbol Unit Conditions Min. Typ. Max.
Absolute Maximum Ratings (Ta=25C)
Supply voltage VCC V -50
Input voltage VIN V -12 to +5
Output current IC mA -500
Power dissipation PD mW 200
Junction temperature Tj C -55 +150
Storage temperature Tstg C -55 +150
Electrical Characteristics (Ta=25C)
Input voltage (OFF) VI(off) V VCC= -5V, IO= -100A -0.3
Input voltage (ON) VI(on) V VO= -0.3V, IO= -20mA -2
Output voltage (ON) VO(on) V IO/II= -50mA/-2.5mA -0.1 to -0.3
Input current II A VI= -5V -0.3 -3.0
Output current IO mA VCC= -50V, VI= 0V -0.5
Input resistance R1 k VO= -5V, IO= -50mA 2.2
DC current gain GI VCE= -10V, IE= 50mA, f= 100MHz 56 200
Resistance ratio R2/R1 3.6 4.5 5.5
Transition frequency fT MHz 200
Transition frequency of the device MHz
Dimension Unit MIN NOM MAX
SOT-23 Outline and Dimensions
A mm 0.89 0.95 1.12
A1 mm 0.01 0.10
A2 mm 0.88 0.95 1.02
b mm 0.30 0.50
b1 mm 0.30 0.40 0.45
c mm 0.08 0.20
c1 mm 0.08 0.10 0.16
D mm 2.80 2.90 3.04
E mm 2.10 2.64
E1 mm 1.20 1.30 1.40
e mm 0.95BSC
e1 mm 1.90BSC
L mm 0.40 0.46 0.60
L1 mm 0.54REF
0 8

2404091719_LRC-S-LDTB123YLT1G_C5368877.pdf

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