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quality Surface Mount PNP Silicon Transistor LRC LDTA144EET1G with Integrated Base Resistors and RoHS Compliance SC89 Package factory
quality Surface Mount PNP Silicon Transistor LRC LDTA144EET1G with Integrated Base Resistors and RoHS Compliance SC89 Package factory

Surface Mount PNP Silicon Transistor LRC LDTA144EET1G with Integrated Base Resistors and RoHS Compliance SC89 Package

Key Attributes
Model Number: LDTA144EET1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
61.1kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTA144EET1G
Package:
SC-89
Product Description

Product Overview

The LDTA114EET1G Series is a line of PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network (BRT). These devices integrate a single transistor with a base resistor (R1) and a base-emitter resistor (R2), eliminating the need for external bias components. This integration simplifies circuit design, reduces board space, and lowers component count. The BRT is housed in an SC-89 package, suitable for low-power surface mount applications. The modified gull-winged leads are designed to absorb thermal stress during soldering, preventing die damage. These transistors are RoHS compliant.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Package: SC-89
  • Compliance: RoHS

Technical Specifications

Model Device Marking R1 (K) R2 (K) Package Shipping
LDTA114EET1G 6A 10 10 SC-89 3000 Tape & Reel
LDTA124EET1G 6B 22 22 SC-89 3000 Tape & Reel
LDTA144EET1G 6C 47 47 SC-89 3000 Tape & Reel
LDTA114YET1G 6D 10 47 SC-89 3000 Tape & Reel
LDTA114TET1G 6E 10 SC-89 3000 Tape & Reel
LDTA143TET1G 6F 4.7 SC-89 3000 Tape & Reel
LDTA123EET1G 6H 2.2 2.2 SC-89 3000 Tape & Reel
LDTA143EET1G 43 4.7 4.7 SC-89 3000 Tape & Reel
LDTA143ZET1G 6K 4.7 47 SC-89 3000 Tape & Reel
LDTA124XET1G 6L 22 47 SC-89 3000 Tape & Reel
LDTA123JET1G 6M 2.2 47 SC-89 3000 Tape & Reel
LDTA115EET1G 6N 100 100 SC-89 3000 Tape & Reel
LDTA144WET1G 6P 47 22 SC-89 3000 Tape & Reel
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation, FR-4 Board (@ TA = 25C) PD 200 mW
Derate above 25C 1.6 mW/C
Thermal Resistance, Junction-to-Ambient (Note 1) RJA 600 C/W
Total Device Dissipation, FR-4 Board (@ TA = 25C) (Note 2) PD 300 mW
Derate above 25C 2.4 mW/C
Thermal Resistance, Junction-to-Ambient (Note 2) RJA 400 C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 C
Characteristic Symbol Min Typ Max Unit Notes
Collector-Base Cutoff Current ICBO - - 100 nAdc (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current ICEO - - 500 nAdc (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current IEBO - - 0.5 mAdc (VEB = 6.0 V, IC = 0)
Collector-Base Breakdown Voltage V(BR)CBO 50 - - Vdc (IC = 10 A, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - Vdc (IC = 2.0 mA, IB = 0, Note 3)
DC Current Gain hFE 35 - 250 - (VCE = 5.0 V, IC = 5.0 mA, Note 4)
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc (IC = 10 mA, IB = 0.3 mA, Note 4)
Output Voltage (on) VOL - - 0.2 Vdc (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k, Note 4)
Output Voltage (off) VOH 4.9 - - Vdc (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k, Note 4)
Model Input Resistor R1 (k) Resistor Ratio R1/R2
LDTA114EET1G 10 1.0
LDTA124EET1G 22 1.0
LDTA144EET1G 47 2.1
LDTA114YET1G 10 0.21
LDTA114TET1G 10 -
LDTA143TET1G 4.7 -
LDTA123EET1G 2.2 1.0
LDTA143EET1G 4.7 1.0
LDTA143ZET1G 4.7 0.1
LDTA124XET1G 22 0.47
LDTA123JET1G 2.2 0.047
LDTA115EET1G 100 1.0
LDTA144WET1G 47 2.1

Notes:

  • 1. FR-4 @ Minimum Pad.
  • 2. FR-4 @ 1.0 1.0 Inch Pad.
  • 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
  • 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.

2410010101_LRC-LDTA144EET1G_C5273202.pdf

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