650V 20A Trench Field Stop IGBT Luxin-semi YGF20N65T2 Suitable for Motor Drive and AC Power Systems
Key Attributes
Model Number:
YGF20N65T2
Product Custom Attributes
Pd - Power Dissipation:
30.6W
Td(off):
60ns
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
20pF
Input Capacitance(Cies):
1.05nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.4V@250uA
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
50pF
Reverse Recovery Time(trr):
50ns
Switching Energy(Eoff):
100uJ
Turn-On Energy (Eon):
470uJ
Mfr. Part #:
YGF20N65T2
Package:
TO-220F
Product Description
Product Overview
The YGF20N65T2, YGK20N65T2, YGP20N65T2, and YGW20N65T2 are 650V / 20A Trench Field Stop IGBTs designed for high-reliability applications. They feature a maximum junction temperature of 175C, high breakdown voltage, short circuit rating, and very low saturation voltage (1.65V Typ. @ IC = 20A). These IGBTs offer soft current turn-off waveforms, making them suitable for soft switching applications, air conditioning, and motor drive inverters.
Product Attributes
- Brand: LU-Semi
- Product Series: YGF20N65T2, YGK20N65T2, YGP20N65T2, YGW20N65T2
- Technology: Trench Field Stop IGBT
- Date: 2021.04 / Rev1.1
- Website: http://www.lu-semi.com/
Technical Specifications
| Model | Package | VCE (V) | IC (A) | VCE(SAT) @ IC=20A (V) | Max Junction Temp (C) | Short Circuit Rated | Soft Current Turn-off |
| YGF20N65T2 | TO-220F (Tube) | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Yes |
| YGK20N65T2 | TO-263 (Tape and reel) | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Yes |
| YGP20N65T2 | TO-220 (Tube) | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Yes |
| YGW20N65T2 | TO247 (Tube) | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Yes |
Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC collector current, limited by Tjmax | IC | 40 (TC = 25C), 20 (TC = 100C) | A | |
| Diode Forward current, limited by Tjmax | IF | 40 (TC = 25C), 20 (TC = 100C) | A | |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Turn off safe operating area | - | - 60 | A | VCE 650V, Tj 175C |
| Pulsed collector current, VGE=15V, tp limited by Tjmax | ICM | 60 | A | |
| Short Circuit Withstand Time, VGE= 15V, VCE 400V | Tsc | 5 | s | |
| Power dissipation , Tj=25 | Ptot | 30.6 | W | TO-220F |
| Power dissipation , Tj=25 | Ptot | 125 | W | TO-220,TO-263 |
| Power dissipation , Tj=25 | Ptot | 142 | W | TO247 |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | Ts | -55...+175 | C | |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | 260 | C | |
| Mounting torque, M3 screw | M | 0.6 | Nm | Maximum of mounting processes: 3 |
Thermal Resistance
| Parameter | Symbol | TO-220F | TO-220,TO-263 | TO247 | Unit |
| IGBT thermal resistance, junction - case | R(j-c) | 4.9 | 1.2 | 1.05 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | 5.8 | 2.38 | 1.7 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | 62.5 | 40 | - | K/W |
Electrical Characteristics (IGBT)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0V, IC = 1mA | 650 | - | - | V |
| Collector to Emitter Saturation Voltage | VCE(SAT) | IC = 20A, VGE = 15V | - | 1.65 | 2.05 | V |
| G-E Threshold Voltage | VGE(th) | VGE = VCE, IC = 250A | 4.4 | 5.4 | 6.4 | V |
| Collector Cut-Off Current | ICES | VCE = 650V, VGE = 0V | - | - | 40 | A |
| G-E Leakage Current | IGES | VGE = 20V, VCE = 0V | - | - | 200 | nA |
| Transconductance | gfs | VCE=20V, IC=15A | - | 10 | - | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1050 | - | pF |
| Output capacitance | Coes | - | - | 50 | - | pF |
| Reverse transfer capacitance | Cres | - | - | 20 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 20A, VGE = 15V | - | 45 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us VCC=400V, Tjstart=25C | - | 150 | - | A |
Switching Characteristics (IGBT)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Turn-on Delay Time | td(on) | Tj=25C VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20 | - | 20 | - | ns |
| Rise Time | tr | - | - | 40 | - | ns |
| Turn-off Delay Time | td(off) | - | - | 60 | - | ns |
| Fall Time | tf | - | - | 75 | - | ns |
| Turn-on Energy | Eon | - | - | 0.47 | - | mJ |
| Turn-off Energy | Eoff | - | - | 0.10 | - | mJ |
Electrical Characteristics (DIODE)
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Diode Forward Voltage | VFM | IF = 20A | - | 1.9 | - | V |
| Reverse Recovery Time | Trr | IF= 15A VR = 300V, di/dt =200A/s | - | 50 | - | ns |
| Reverse Recovery Current | Irr | - | - | 4 | - | A |
| Reverse Recovery Charge | Qrr | - | - | 83 | - | nC |
2410121255_luxin-semi-YGF20N65T2_C4153665.pdf
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