S LBTN180Z4TZHG 80V NPN Medium Power Transistor Automotive Grade AEC Q101 Qualified High Dissipation
Key Attributes
Model Number:
S-LBTN180Z4TZHG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
833mW
Transition Frequency(fT):
180MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBTN180Z4TZHG
Package:
SOT-223
Product Description
Product Overview
The LBTN180Z4TZHG and S-LBTN180Z4TZHG are 80V NPN medium power transistors designed for automotive and other applications requiring unique site and control change requirements. They offer high current capability, multiple current gain selections, and high power dissipation. The S-prefix variants are AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS and Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S-prefix variants)
- Package: SOT223
Technical Specifications
| Model | Type | Voltage (V) | Current (A) | Power Dissipation (mW) | Temperature Range (C) | Marking | Shipping |
| LBTN180Z4TZHG | NPN medium power transistor | 80 | 1 (IC), 2 (ICM) | 833 (Total Device Dissipation, FR-4 Board @ TA = 25C) | -55 to +150 (Junction and Storage) | LBTN180Z4TZHG | 1000/Tape&Reel |
| S-LBTN180Z4TZHG | NPN medium power transistor (Automotive) | 80 | 1 (IC), 2 (ICM) | 833 (Total Device Dissipation, FR-4 Board @ TA = 25C) | -55 to +150 (Junction and Storage) | S-LBTN180Z4TZHG | 1000/Tape&Reel |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 80 | - | - | V | (IC = 1.0 mA, IB = 0) |
| CollectorBase Breakdown Voltage | VBR(CBO) | 100 | - | - | V | (IC = 100 A, IE = 0) |
| EmitterBase Breakdown Voltage | VBR(EBO) | 5 | - | - | V | (IE = 100 A, IC = 0) |
| Collector-Emitter cutoff Current | ICEO | - | - | 10 | A | (VCE= 80V,IB=0) |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA | (VCB = 30 V, IE = 0 A) |
| Collector-Base Cutoff Current | ICBO | - | - | 1 | A | (VCB = 30 V, IE = 0 A,Tj = 150) |
| Emitter-Base CutOff Current | IEBO | - | - | 100 | nA | (VEB = 5 V, IC = 0 A) |
| DC Current Gain | HFE | - | - | - | - | (IC = 5mA, VCE =2V) |
| DC Current Gain | HFE | 63 | - | - | - | (IC =150mA, VCE =2V) |
| DC Current Gain | HFE | - | - | 250 | - | (IC =500mA, VCE = 2V) |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | - | 0.5 | V | (IC = 500 mA, IB = 50 mA) |
| BaseEmitter Voltage | VBE | - | - | - | V | (VCE = 2 V, IC = 500 mA) |
| BaseEmitter Saturation Voltage | VBE(sat) | - | - | 1 | V | (IC = 500 mA, IB = 50 mA) |
| Transitional Frequency | fT | - | - | 100 | MHz | (VCE = 5 V, IC = 50 mA,f = 100 MHz) |
| Collector Capacitance | Cc | - | - | 6 | pF | (VCB = 10 V, IE = ie = 0 A,f = 1 MHz) |
2410010101_LRC-S-LBTN180Z4TZHG_C2932864.pdf
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