PNP Silicon Transistor LRC S-LBC807-40LT1G Offering 45V Collector Emitter Voltage and 100MHz Frequency
Key Attributes
Model Number:
S-LBC807-40LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBC807-40LT1G
Package:
SOT-23
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. LBC807 Series are PNP Silicon general purpose transistors designed for switching and amplification applications. They offer a collector current capability of -500 mA and a collector-emitter voltage of -45 V. The PNP complement to the LBC807 Series is also available.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Origin: N/A (Implied from manufacturer)
- Material: Silicon (PNP)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)
- RoHS Compliance: Declared
Technical Specifications
| Device | V CEO (max) | I C (max) | h FE (min) @ IC/V CE | V CE(sat) (max) @ IC/IB | f T (min) @ IC/V CE | C obo (typ) @ VC B |
| LBC807-16LT1G/LT3G | -45 V | -500 mA | 100 @ -100 mA/-1.0 V | -0.7 V @ -500 mA/-50 mA | 100 MHz @ -10 mA/-5.0 V | 10 pF @ -10 V |
| LBC807-25LT1G/LT3G | -45 V | -500 mA | 160 @ -100 mA/-1.0 V | -0.7 V @ -500 mA/-50 mA | 100 MHz @ -10 mA/-5.0 V | 10 pF @ -10 V |
| LBC807-40LT1G/LT3G | -45 V | -500 mA | 250 @ -100 mA/-1.0 V | -0.7 V @ -500 mA/-50 mA | 100 MHz @ -10 mA/-5.0 V | 10 pF @ -10 V |
| S-LBC807-16LT1G | -45 V | -500 mA | 100 @ -100 mA/-1.0 V | -0.7 V @ -500 mA/-50 mA | 100 MHz @ -10 mA/-5.0 V | 10 pF @ -10 V |
| S-LBC807-25LT1G | -45 V | -500 mA | 160 @ -100 mA/-1.0 V | -0.7 V @ -500 mA/-50 mA | 100 MHz @ -10 mA/-5.0 V | 10 pF @ -10 V |
| S-LBC807-40LT1G | -45 V | -500 mA | 250 @ -100 mA/-1.0 V | -0.7 V @ -500 mA/-50 mA | 100 MHz @ -10 mA/-5.0 V | 10 pF @ -10 V |
2010222107_LRC-S-LBC807-40LT1G_C883198.pdf
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