220 Package IGBT YGP20N65T2 650V 20A with Soft Current Turn Off Waveforms and Low Saturation Voltage
Key Attributes
Model Number:
YGP20N65T2
Product Custom Attributes
Pd - Power Dissipation:
125W
Td(off):
60ns
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
20pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.4V@250uA
Gate Charge(Qg):
45nC@15V
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
50pF
Reverse Recovery Time(trr):
50ns
Switching Energy(Eoff):
100uJ
Turn-On Energy (Eon):
470uJ
Mfr. Part #:
YGP20N65T2
Package:
TO-220
Product Description
650V / 20A Trench Field Stop IGBT
The YGF20N65T2, YGK20N65T2, YGP20N65T2, and YGW20N65T2 are 650V / 20A Trench Field Stop IGBTs designed for high-reliability applications. They feature a maximum junction temperature of 175C, high breakdown voltage, short circuit rating, and very low saturation voltage (1.65V Typ. @ 20A). These IGBTs are suitable for soft switching applications, air conditioning, and motor drive inverters.
Product Attributes
- Brand: LU-Semi
- Origin: China (inferred from URL)
- Product Series: YGF20N65T2, YGK20N65T2, YGP20N65T2, YGW20N65T2
Technical Specifications
| Model | Package | VCE (V) | IC (A) | VCE(SAT) (V) @ IC=20A | Max Junction Temp (C) | Features |
| YGF20N65T2 | TO-220F | 650 | 20 | 1.65 (Typ.) | 175 | High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms |
| YGK20N65T2 | TO-263 | 650 | 20 | 1.65 (Typ.) | 175 | High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms |
| YGP20N65T2 | TO-220 | 650 | 20 | 1.65 (Typ.) | 175 | High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms |
| YGW20N65T2 | TO247 | 650 | 20 | 1.65 (Typ.) | 175 | High breakdown voltage, Short Circuit Rated, Soft current turn-off waveforms |
Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |
| DC collector current | IC | 40 (TC=25C), 20 (TC=100C) | A | limited by Tjmax |
| Diode Forward current | IF | 40 (TC=25C), 20 (TC=100C) | A | limited by Tjmax |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Turn off safe operating area | - | - 60 | A | VCE 650V, Tj 175C |
| Pulsed collector current | ICM | 60 | A | VGE=15V, tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 5 | s | VGE= 15V, VCE 400V |
| Power dissipation | Ptot | 30.6 (TO-220F), 125 (TO-220,TO-263), 142 (TO247) | W | Tj=25 |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | Ts | -55...+175 | C | |
| Soldering temperature | - | 260 | C | wave soldering, 1.6mm from case for 10s |
| Mounting torque | M | 0.6 | Nm | M3 screw, Maximum of mounting processes |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Static Characteristics | ||||||
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0V, IC = 1mA | 650 | - | - | V |
| Collector to Emitter Saturation Voltage | VCE(SAT) | IC = 20A, VGE = 15V | - | 1.65 | 2.05 | V |
| G-E Threshold Voltage | VGE(th) | VGE = VCE, IC = 250A | 4.4 | 5.4 | 6.4 | V |
| Collector Cut-Off Current | ICES | VCE = 650V, VGE = 0V | - | - | 40 | A |
| G-E Leakage Current | IGES | VGE = 20V, VCE = 0V | - | - | 200 | nA |
| Transconductance | gfs | VCE=20V, IC=15A | - | 10 | - | S |
| Dynamic Characteristics (IGBT) | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1050 | - | pF |
| Output capacitance | Coes | - | - | 50 | - | pF |
| Reverse transfer capacitance | Cres | - | - | 20 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 20A, VGE = 15V | - | 45 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | - | 150 | - | A |
| Switching Characteristics (Inductive Load) | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20, Tj=25C | - | 20 | - | ns |
| Rise Time | tr | - | - | 40 | - | ns |
| Turn-off Delay Time | td(off) | - | - | 60 | - | ns |
| Fall Time | tf | - | - | 75 | - | ns |
| Turn-on Energy | Eon | - | - | 0.47 | - | mJ |
| Turn-off Energy | Eoff | - | - | 0.10 | - | mJ |
| Electrical Characteristics (DIODE) | ||||||
| Diode Forward Voltage | VFM | IF = 20A | - | 1.9 | - | V |
| Reverse Recovery Time | Trr | IF= 15A, VR = 300V, di/dt =200A/s | - | 50 | - | ns |
| Reverse Recovery Current | Irr | - | - | 4 | - | A |
| Reverse Recovery Charge | Qrr | - | - | 83 | - | nC |
2410121255_luxin-semi-YGP20N65T2_C4153667.pdf
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