Fast recovery diode Littelfuse IXYS DPG120C300QB with dissipation and soft reverse recovery features

Key Attributes
Model Number: DPG120C300QB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
450A
Reverse Leakage Current (Ir):
1uA@300V
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
300V
Diode Configuration:
1 Pair Common Cathode
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
1.4V@60A
Current - Rectified:
60A
Mfr. Part #:
DPG120C300QB
Package:
TO-3P-3
Product Description

Product Overview

The DPG120C300QB is a high-performance, common cathode, fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, while low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal for use as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Part Number: DPG120C300QB
  • Package: TO-3P (Industry standard outline compatible with TO-247)
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Backside: Cathode

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 300
VRMS RMS current per terminal A 70
IF(AV) average forward current TC = 25C A 120
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 300
IF Forward current TVJ = 125C, VR = 200 V A 60, 120
VF0 threshold voltage TVJ = 175C V 1.40
rF slope resistance for power loss calculation only TVJ = 175C m 5.8
IR reverse current, drain current TVJ = 25C, VR = 200 V A 0.35
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 60
Ptot total power dissipation TC = 25C W 275
RthJC thermal resistance junction to case K/W 0.55
RthCH thermal resistance case to heatsink K/W 0.3
trr reverse recovery time IF = 60 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C ns 35
IRM max. reverse recovery current IF = 60 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C A 9
Qrr reverse recovery charge IF = 60 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C C 3.5
CJ junction capacitance VR = 150 V; f = 1 MHz; TVJ = 25C pF 80
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
Weight g 5.2
Mounting torque Nm 1.2 0.8
Mounting force with clip N 120 20

2410121747_Littelfuse-IXYS-DPG120C300QB_C7430188.pdf

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