650V 75A Trench Field Stop IGBT Luxin-semi YGW75N65T1 Suitable for Power Electronics Applications
Key Attributes
Model Number:
YGW75N65T1
Product Custom Attributes
Td(off):
660ns
Pd - Power Dissipation:
500W
Td(on):
110ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
100pF
Input Capacitance(Cies):
4.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.6V@250uA
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
200pF
Reverse Recovery Time(trr):
50ns
Switching Energy(Eoff):
8.4mJ
Turn-On Energy (Eon):
4.3mJ
Mfr. Part #:
YGW75N65T1
Package:
TO-247
Product Description
Product Overview
The YGW75N65T1 is a 650V / 75A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.
Product Attributes
- Brand: LU-Semi
- Product Code: YGW75N65T1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Breakdown Voltage | VCE | VGE=0V , IC=250uA | 650 | V |
| VGE=0V , IC=1mA | 650 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.6 - 6.2 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A, Tj = 25C | 1.7 | V |
| VGE=15V, IC=75A, Tj = 175C | 2.5 | V | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | 0.1 | A |
| VCE = 650V, VGE = 0V, Tj = 175C | 5000 | A | ||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75A | 40 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 200 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 100 | pF |
| Gate charge | QG | VCC = 480V, IC = 75A, VGE = 15V | 260 | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | 350 | A |
| Turn-on Delay Time | td(on) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 110 | ns |
| Rise Time | tr | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 40 | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 660 | ns |
| Fall Time | tf | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 60 | ns |
| Turn-on Energy | Eon | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 4.3 | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 8.4 | mJ |
| Diode Forward Voltage | VFM | IF = 75A, Tj = 25C | 1.9 | V |
| Reverse Recovery Time | Trr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 50 | ns |
| Reverse Recovery Current | Irr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 12 | A |
| Reverse Recovery Charge | Qrr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 350 | nC |
| IGBT thermal resistance, junction - case | R(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| DC collector current | IC | TC = 25C | 150 | A |
| DC collector current | IC | TC = 100C | 75 | A |
| Diode Forward current | IF | TC = 25C | 150 | A |
| Diode Forward current | IF | TC = 100C | 75 | A |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Power dissipation | Ptot | Tj=25C | 500 | W |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+175 | C |
2410121314_luxin-semi-YGW75N65T1_C4153746.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
