High breakdown voltage IGBT luxin-semi YGW60N65F1A2 650V 60A for high speed switching applications
Key Attributes
Model Number:
YGW60N65F1A2
Product Custom Attributes
Td(off):
165ns
Pd - Power Dissipation:
312W
Td(on):
56ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
70pF
Input Capacitance(Cies):
3.8nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
158nC@15V
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
130pF
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
890uJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
YGW60N65F1A2
Package:
TO-247
Product Description
Product Overview
The YGW60N65F1A2 is a 650V / 60A Trench Field Stop IGBT designed for high-speed switching applications. It features high breakdown voltage for improved reliability, Trench-Stop Technology for high ruggedness and temperature stability, low VCEsat, and easy parallel switching capability. Its enhanced avalanche capability makes it suitable for demanding applications.
Product Attributes
- Brand: LU-Semi
- Model: YGW60N65F1A2
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| General Characteristics | ||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC Collector Current | IC | 60 | A | TC = 100C |
| Diode Forward Current | IF | 40 | A | TC = 100C |
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |
| Power Dissipation | Ptot | 312 | W | Tj=25C |
| Operating Junction Temperature | Tj | -40...+175 | C | |
| Storage Temperature | TS | -55...+175 | C | |
| IGBT Thermal Resistance (Junction-Case) | R(j-c) | 0.48 | K/W | |
| Diode Thermal Resistance (Junction-Case) | R(j-c) | 1.1 | K/W | |
| Electrical Characteristics | ||||
| Gate Threshold Voltage | VGE(th) | 4.0 5.0 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.85 2.55 | V | VGE=15V, IC=60A, Tj = 25C |
| Zero Gate Voltage Collector Current | ICES | 0.1 4000 | A | VCE = 650V, VGE = 0V, Tj = 175C |
| Gate-Emitter Leakage Current | IGES | 100 | nA | VCE = 0V, VGE =20V |
| Transconductance | gfs | 52 | S | VCE = 20V, IC = 60A |
| Dynamic Characteristics | ||||
| Input Capacitance | Cies | 3800 | pF | VCE = 30V, VGE = 0V, f = 1 MHz |
| Output Capacitance | Coes | 130 | pF | |
| Reverse Transfer Capacitance | Cres | 70 | pF | |
| Gate Charge | QG | 158 | nC | VCC = 520V, IC = 60A, VGE = 15V |
| Switching Characteristics (Inductive Load) | ||||
| Turn-on Delay Time | td(on) | 56 | ns | Tj=25C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12 |
| Rise Time | tr | 79 | ns | |
| Turn-off Delay Time | td(off) | 165 | ns | |
| Fall Time | tf | 81 | ns | |
| Turn-on Energy | Eon | 2.2 | mJ | |
| Turn-off Energy | Eoff | 0.89 | mJ | |
| DIODE Electrical Characteristics | ||||
| Diode Forward Voltage | VFM | 1.8 | V | IF = 40A, Tj = 25C |
| Reverse Recovery Time | Trr | 90 | ns | IF= 60A, VR = 400V, di/dt= 400A/s |
| Reverse Recovery Current | Irr | 12 | A | |
| Reverse Recovery Charge | Qrr | 600 | nC | |
2410121257_luxin-semi-YGW60N65F1A2_C4153740.pdf
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