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quality NPN Silicon Transistor with Monolithic Bias Resistor Network LRC LDTC123JET1G Surface Mount Package RoHS Compliant factory
quality NPN Silicon Transistor with Monolithic Bias Resistor Network LRC LDTC123JET1G Surface Mount Package RoHS Compliant factory

NPN Silicon Transistor with Monolithic Bias Resistor Network LRC LDTC123JET1G Surface Mount Package RoHS Compliant

Key Attributes
Model Number: LDTC123JET1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
2.2kΩ
Resistor Ratio:
0.047
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTC123JET1G
Package:
SC-89
Product Description

Product Overview

The LDTC123JET1G and S-LDTC123JET1G are NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. These devices simplify circuit design, reduce board space, and lower component count. The S-prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements. The materials comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Model Numbers: LDTC123JET1G, S-LDTC123JET1G
  • Material Compliance: RoHS, Halogen Free
  • Qualification: AEC-Q101 (for S-prefix variants)
  • Manufacturing Capability: PPAP capable (for S-prefix variants)
  • Package Type: SC89
  • Transistor Type: NPN Silicon
  • Configuration: Surface Mount Transistor with Monolithic Bias Resistor Network
  • Shipping: 3000/Tape&Reel

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Notes
Maximum Ratings (Ta = 25C)
Collector Current Continuous IC - - 100 mA
CollectorEmitter Voltage VCEO - - 50 V
CollectorBase Voltage VCBO - - 50 V
Total Device Dissipation, FR5 Board PD - 1.6 - mW @ TA = 25C (Note 1)
Derate above 25C - 600 - mW/C
JunctiontoAmbient Thermal Resistance RJA - - - C/W (Note 1)
Junction and Storage Temperature TJ, Tstg -55 - +150 C
Electrical Characteristics (Ta= 25C)
CollectorEmitter Breakdown Voltage VBR(CEO) 50 - - V (IC = 2.0 mA, IB = 0)
CollectorBase Breakdown Voltage VBR(CBO) 50 - - V (IC = 10 A, IE = 0)
Collector-Base Cutoff Current ICBO - - 100 nA (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current ICEO - - 500 nA (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current IEBO - - 0.2 A (VEB = 6.0 V, IC = 0)
DC Current Gain HFE 80 - 140 (IC = 5.0 mA, VCE = 10 V) (Note 2.)
CollectorEmitter Saturation Voltage VCE(sat) - - 0.25 V (IC = 10 mA, IB = 0.3 mA) (Note 2.)
Input Resistor R1 1.54 2.2 2.86 K
Resistor Ratio R1/R2 0.038 0.047 0.056
On-State Input Voltage VI(on) - - 1.1 V
Off-State Input Voltage VI(off) - - 0.5 V (VCE=5V, IC=0.1mA)
Output Voltage (on) VOL - - 0.2 V (VCC = 5.0 V, VB = 2.5 V, RL =1.0K)
Output Voltage (on) VOH - - 0.2 V (VCC = 5.0 V, VB = 0.5 V, RL =1.0K)
Device Marking and Resistor Values
Device Marking LDTC123JET1G
Bias Resistor Network R1(K) 2.2
Bias Resistor Network R2(K) 47
Outline and Dimensions
Dimension A 1.50 1.60 1.70 mm (0.059)
Dimension B 0.75 0.85 0.95 mm (0.030-0.040)
Dimension C 0.23 0.28 0.33 mm (0.009-0.013)
Dimension D 0.60 0.70 0.80 mm (0.024-0.031)
Dimension G 0.50 - - mm BSC (0.020)
Dimension H - - - mm (0.063 REF)
Dimension J 0.10 0.15 0.20 mm (0.004-0.008)
Dimension K 0.30 0.40 0.50 mm (0.012-0.020)
Dimension L 1.50 1.60 1.70 mm (0.059-0.067)
Dimension M - - - mm (0.021 REF)
Dimension S 1.10 - - mm REF (0.043)

Note 1: FR5 @ Minimum Pad.

Note 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

Disclaimer: All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products, please confirm the latest information with a LRC sales representative.


2410010133_LRC-LDTC123JET1G_C5273215.pdf

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