PNP Silicon General Purpose Transistor LRC L2SA1037AKRLT1G SOT23 Package Electronic Component
Key Attributes
Model Number:
L2SA1037AKRLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
140MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SA1037AKRLT1G
Package:
SOT-23
Product Description
Product Overview
The L2SA1037AKQ/KSL/KRL series are PNP silicon general-purpose transistors designed for various electronic applications. They offer reliable performance with key electrical characteristics and are available in the SOT-23 package.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified (S-Prefix Series)
- Compliance: RoHS requirements
Technical Specifications
| Model | V CEO (V) | V CBO (V) | V EBO (V) | I C Continuous (mAdc) | P C (W) | T j (C) | T stg (C) | V (BR)CEO Min (V) | V (BR)EBO Min (V) | V (BR)CBO Min (V) | I CBO Max (A) | I EBO Max (A) | V CE(sat) Max (V) | h FE Min | h FE Typ | h FE Max | f T Typ (MHz) | C ob Typ (pF) | C ob Max (pF) |
| L2SA1037AKQLT1G | -50 | -60 | -6.0 | -150 | 0.2 | 150 | -55 ~+150 | -50 | -6 | -60 | -0.1 | -0.1 | -0.5 | 120 | - | 560 | 140 | 4.0 | 5.0 |
| L2SA1037AKSLT1G | -50 | -60 | -6.0 | -150 | 0.2 | 150 | -55 ~+150 | -50 | -6 | -60 | -0.1 | -0.1 | -0.5 | 120 | - | 560 | 140 | 4.0 | 5.0 |
| L2SA1037AKRLT1G | -50 | -60 | -6.0 | -150 | 0.2 | 150 | -55 ~+150 | -50 | -6 | -60 | -0.1 | -0.1 | -0.5 | 120 | - | 560 | 140 | 4.0 | 5.0 |
| S-L2SA1037AKQLT1G | -50 | -60 | -6.0 | -150 | 0.2 | 150 | -55 ~+150 | -50 | -6 | -60 | -0.1 | -0.1 | -0.5 | 120 | - | 560 | 140 | 4.0 | 5.0 |
| S-L2SA1037AKQLT3G | -50 | -60 | -6.0 | -150 | 0.2 | 150 | -55 ~+150 | -50 | -6 | -60 | -0.1 | -0.1 | -0.5 | 120 | - | 560 | 140 | 4.0 | 5.0 |
| S-L2SA1037AKRLT1G | -50 | -60 | -6.0 | -150 | 0.2 | 150 | -55 ~+150 | -50 | -6 | -60 | -0.1 | -0.1 | -0.5 | 120 | - | 560 | 140 | 4.0 | 5.0 |
1809051321_LRC-L2SA1037AKRLT1G_C136162.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
