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quality NPN Transistor LRC S-LDTD123YLT1G Featuring Monolithic Bias Resistor Network for Inverter and Interface factory
quality NPN Transistor LRC S-LDTD123YLT1G Featuring Monolithic Bias Resistor Network for Inverter and Interface factory

NPN Transistor LRC S-LDTD123YLT1G Featuring Monolithic Bias Resistor Network for Inverter and Interface

Key Attributes
Model Number: S-LDTD123YLT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV@50mA,2.5mA
Input Resistor:
2.2kΩ
Resistor Ratio:
4.5
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LDTD123YLT1G
Package:
SOT-23
Product Description

Product Overview

The LDTD123YLT1G is a NPN Silicon Surface Mount Transistor featuring a monolithic bias resistor network. This integrated design simplifies inverter circuit configurations by eliminating the need for external input resistors. The thin-film bias resistors offer complete isolation for positive input biasing and minimize parasitic effects. Designed for ease of use, it requires only the setting of on/off conditions for operation, making device design more straightforward. It is suitable for Inverter, Interface, and Driver applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS
  • Device Type: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
  • AEC-Q101 Qualified: Yes (for S-LDTD123YLT1G prefix)
  • PPAP Capable: Yes (for S-LDTD123YLT1G prefix)

Technical Specifications

Model Device Marking R1 (K) R2 (K) Package Shipping Quantity Supply Voltage (VCC) Input Voltage (VIN) Output Current (IO) Power Dissipation (Pd) Junction Temperature (Tj) Storage Temperature (Tstg) Transition Frequency (fT)
LDTD123YLT1G F62 2.2 10 SOT-23 3000/Tape & Reel 50 V -5 to +12 V 500 mA 200 mW 150 C -55 to +150 C Min: 0.1 MHz, Typ: 200 MHz
LDTD123YLT3G F62 2.2 10 SOT-23 10000/Tape & Reel 50 V -5 to +12 V 500 mA 200 mW 150 C -55 to +150 C Min: 0.1 MHz, Typ: 200 MHz
S-LDTD123YLT1G F62 2.2 10 SOT-23 3000/Tape & Reel 50 V -5 to +12 V 500 mA 200 mW 150 C -55 to +150 C Min: 0.1 MHz, Typ: 200 MHz
S-LDTD123YLT3G F62 2.2 10 SOT-23 10000/Tape & Reel 50 V -5 to +12 V 500 mA 200 mW 150 C -55 to +150 C Min: 0.1 MHz, Typ: 200 MHz
Electrical Characteristics (Ta=25C unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Unit
Input voltage (OFF) VI(off) VCC=5V, IO=100A - - 0.1 V
Input voltage (ON) VI(on) VO=0.3V, IO=20mA - - 0.3 V
Output voltage (on) VO(on) IO/II=50mA/2.5mA - - 0.3 V
Input current II VI=5V - - 2.2 A
Output current IO VCC=50V, VI=0V - - 0.3 mA
DC current gain GI VO=5V, IO=50mA 56 200 - -
Input resistance R1 VCE=10V, IE= 50mA, f=100MHz 1.54 2.2 - k
Resistance ratio R2/R1 3.6 - 5.5 -
Transition frequency fT - - - MHz
SOT-23 Dimensions
Dimension Symbol Min (inch) Max (inch) Min (mm) Max (mm)
A A 0.1102 0.1197 2.80 3.04
B B 0.0472 0.0551 1.20 1.40
C C 0.0350 0.0440 0.89 1.11
D D 0.0150 0.0200 0.37 0.50
G G 0.0701 0.0807 1.78 2.04
H H 0.0005 0.0040 0.013 0.100
J J 0.0034 0.0070 0.085 0.177
K K 0.0140 0.0285 0.35 0.69
L L 0.0350 0.0401 0.89 1.02
S S 0.0830 0.1039 2.10 2.64
V V 0.0177 0.0236 0.45 0.60

2304140030_LRC-S-LDTD123YLT1G_C383295.pdf

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