Littelfuse IXYS DSEP2X61-06A Fast Recovery Diode Suitable for Snubber and Free Wheeling Applications
Product Overview
The DSEP2x61-06A is a high-performance Fast Recovery Diode featuring low loss and soft recovery characteristics. Designed with parallel legs and planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode. It is also used in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Package: SOT-227B (minibloc)
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Base Plate: Copper internally DCB isolated
- Isolation Voltage: 3000 V~
- Product Marking: DSEP2x61-06A
Technical Specifications
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | 600 | V | ||
| VRSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | 650 | V | ||
| IF(AV) | average forward current | TC = 100C | 60 | A | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | 600 | A | ||
| It | t = 10 ms; (50 Hz), sine; TVJ = 45C | 1800 | As | |||
| Ptot | total power dissipation | TC = 25C | 140 | W | ||
| TVJ | virtual junction temperature | -40 | 150 | C | ||
| Tstg | storage temperature | -40 | 150 | C | ||
| VT0 | threshold voltage | TVJ = 150C | 1,09 | V | ||
| R0 | slope resistance | TVJ = 150C | 2,4 | m | ||
| rF | slope resistance for power loss calculation only | 4,3 | m | |||
| RthJC | thermal resistance junction to case | 0,85 | K/W | |||
| RthCH | thermal resistance case to heatsink | 0,1 | K/W | |||
| VJ | junction capacitance | VR = 400 V; f = 1 MHz | 67 | pF | ||
| trr | reverse recovery time | IF = 60 A; -dIF/dt = 200 A/s; TVJ = 100C | 35 | ns | ||
| IRM | max. reverse recovery current | IF = 60 A; -dIF/dt = 200 A/s; TVJ = 100C | 13 | A | ||
| Qr | reverse recovery charge | IF = 60 A; -dIF/dt = 200 A/s; TVJ = 100C | 110 | nC | ||
| Isolation Voltage | t = 1 second | 3000 | V | |||
| Mounting Torque | 1,5 | Nm | ||||
| Terminal Torque | 1,1 | Nm | ||||
| Weight | 30 | g |
Applications: Antiparallel diode for high frequency switching devices, Antisaturation diode, Snubber diode, Free wheeling diode, Rectifiers in switch mode power supplies (SMPS), Uninterruptible power supplies (UPS).
Features / Advantages: Planar passivated chips, Very low leakage current, Very short recovery time, Improved thermal behaviour, Very low Irm-values, Very soft recovery behaviour, Avalanche voltage rated for reliable operation, Soft reverse recovery for low EMI/RFI, Low Irm reduces: Power dissipation within the diode, Turn-on loss in the commutating switch.
2411220546_Littelfuse-IXYS-DSEP2X61-06A_C3040184.pdf
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