600V 20A power MOSFET MagnaChip Semicon MMP60R190PTH designed for low switching losses and reduced EMI
Key Attributes
Model Number:
MMP60R190PTH
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
RDS(on):
170mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
74pF
Number:
1 N-channel
Pd - Power Dissipation:
154W
Input Capacitance(Ciss):
1.63nF
Output Capacitance(Coss):
1.25nF
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
MMP60R190PTH
Package:
TO-220
Product Description
Product Overview
The MMP60R190P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling and offers designers the advantage of low EMI and reduced switching losses, making it suitable for various high-efficiency applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Revision: 1.2
- Date: Jun. 2021
- Certifications: Halogen Free, RoHS Status: Halogen Free
- Package: TO-220
- Packing: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Note |
| Drain Source voltage | VDSS | 600 | V | ||
| Gate Source voltage | VGSS | 30 | V | ||
| Continuous drain current | ID | 20 | A | TC=25 | |
| Continuous drain current | ID | 12.7 | A | TC=100 | |
| Pulsed drain current | IDM | 60 | A | (1) | |
| Power dissipation | PD | 154 | W | ||
| Single - pulse avalanche energy | EAS | 420 | mJ | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | ||
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | ||
| Storage temperature | Tstg | -55 ~150 | |||
| Maximum operating junction temperature | Tj | 150 | |||
| Thermal resistance, junction-case max | Rthjc | 0.81 | /W | ||
| Thermal resistance, junction-ambient max | Rthja | 62.5 | /W | ||
| Drain Source Breakdown voltage | V(BR)DSS | 600 | V | VGS = 0V, ID=0.25mA | |
| Gate Threshold Voltage | VGS(th) | 3 | V | VDS = VGS, ID=0.25mA | Typ. |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 600V, VGS = 0V | Max. |
| Gate Leakage Current | IGSS | 100 | nA | VGS = 30V, VDS =0V | Max. |
| Drain-Source On State Resistance | RDS(ON) | 0.19 | VGS = 10V, ID = 9.5 A | Max. | |
| Input Capacitance | Ciss | 1630 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | Typ. |
| Output Capacitance | Coss | 1250 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | Typ. |
| Reverse Transfer Capacitance | Crss | 74 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | Typ. |
| Effective Output Capacitance Energy Related | Co(er) | 39 | VDS = 0V to 480V, VGS = 0V,f = 1.0MHz | Typ. (3) | |
| Turn On Delay Time | td(on) | 32 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 20 A | Typ. |
| Rise Time | tr | 73 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 20 A | Typ. |
| Turn Off Delay Time | td(off) | 146 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 20 A | Typ. |
| Fall Time | tf | 47 | ns | VGS = 10V, RG = 25, VDS = 300V, ID = 20 A | Typ. |
| Total Gate Charge | Qg | 51 | nC | VGS = 10V, VDS = 480V, ID = 20 A | Typ. |
| Gate Source Charge | Qgs | 12 | nC | VGS = 10V, VDS = 480V, ID = 20 A | Typ. |
| Gate Drain Charge | Qg | 19 | nC | VGS = 10V, VDS = 480V, ID = 20 A | Typ. |
| Gate Resistance | RG | 3.0 | VGS = 0V, f = 1.0MHz | Typ. | |
| Continuous Diode Forward Current | ISD | 20 | A | ||
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 20 A, VGS = 0 V | Max. |
| Reverse Recovery Time | trr | 483 | ns | ISD = 20 A di/dt = 100 A/s VDD = 100 V | Typ. |
| Reverse Recovery Charge | Qrr | 7.6 | C | ISD = 20 A di/dt = 100 A/s VDD = 100 V | Typ. |
| Reverse Recovery Current | Irrm | 31.5 | A | ISD = 20 A di/dt = 100 A/s VDD = 100 V | Typ. |
2509121533_MagnaChip-Semicon-MMP60R190PTH_C22403372.pdf
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