Performance NPN Silicon Transistor LRC LBC847BWT1G Ideal for Electronic Circuit Designs and Projects
Key Attributes
Model Number:
LBC847BWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC847BWT1G
Package:
SC-70
Product Description
LESHAN RADIO COMPANY, LTD. - General Purpose NPN Silicon Transistors
LESHAN RADIO COMPANY, LTD. offers a series of general-purpose NPN silicon transistors designed for various electronic applications. These transistors provide reliable performance with key electrical characteristics such as DC current gain, saturation voltages, and breakdown voltages.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: RoHS compliant, AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix devices)
- Package: SOT323 / SC70
- Origin: China (implied by manufacturer)
Technical Specifications
| Model | Collector-Emitter Voltage (V CEO) | Collector-Base Voltage (V CBO) | Emitter-Base Voltage (V EBO) | Collector Current - Continuous (I C) | Total Device Dissipation (P D) | Thermal Resistance, Junction to Ambient (R JA) | Junction and Storage Temperature (T J, T stg) | Collector Cutoff Current (I CBO) (VCB = 30 V) | DC Current Gain (h FE) (I C = 2.0 mA, V CE = 5.0 V) | Collector-Emitter Saturation Voltage (V CE(sat)) (I C = 10 mA, I B = 0.5 mA) | Collector-Emitter Saturation Voltage (V CE(sat)) (I C = 100 mA, I B = 5.0 mA) | Base-Emitter Saturation Voltage (V BE(sat)) (I C = 10 mA, I B = 0.5 mA) | Base-Emitter Saturation Voltage (V BE(sat)) (I C = 100 mA, I B = 5.0 mA) | Base-Emitter Voltage (V BE(on)) (I C = 2.0 mA, V CE = 5.0 V) | Base-Emitter Voltage (V BE(on)) (I C = 10 mA, V CE = 5.0 V) | Current-Gain Bandwidth Product (f T) (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) | Output Capacitance (C obo) (V CB = 10 V, f = 1.0 MHz) | Noise Figure (NF) (I C = 0.2 mA, V CE = 5.0 Vdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) |
| BC846 | 65 V | 80 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 110180 | 580660 mV | 100 MHz | |||||||
| BC847 | 45 V | 50 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 180450 | 660700 mV | 100 MHz | |||||||
| BC848 | 30 V | 30 V | 5.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 200800 | 700 mV | 770 mV | 100 MHz | 4.5 pF | 10 dB | ||||
| BC846A | 65 V | 80 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 110180 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 580660 mV | 100 MHz | |||
| BC846B | 65 V | 80 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 220450 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 660700 mV | 100 MHz | |||
| BC847A | 45 V | 50 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 180290 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 660700 mV | 100 MHz | |||
| BC847B | 45 V | 50 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 290520 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 700 mV | 100 MHz | |||
| BC847C | 45 V | 50 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 420800 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 700 mV | 100 MHz | |||
| BC848A | 30 V | 30 V | 5.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 200420 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 700 mV | 770 mV | 100 MHz | 4.5 pF | 10 dB |
| BC848B | 30 V | 30 V | 5.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 290600 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 700 mV | 770 mV | 100 MHz | 4.5 pF | 10 dB |
| BC848C | 30 V | 30 V | 5.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA | 4501000 | 0.25 V | 0.6 V | 0.7 V | 0.9 V | 700 mV | 770 mV | 100 MHz | 4.5 pF | 10 dB |
1912111437_LRC-LBC847BWT1G_C383193.pdf
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