N channel Trench MOSFET MagnaChip Semicon MDP1723TH designed for synchronous rectification solutions
Key Attributes
Model Number:
MDP1723TH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
191A
RDS(on):
1.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
203pF
Pd - Power Dissipation:
138.9W
Input Capacitance(Ciss):
5.755nF
Output Capacitance(Coss):
1.83nF
Gate Charge(Qg):
88.3nC@10V
Mfr. Part #:
MDP1723TH
Package:
TO-220
Product Description
Product Overview
The MDP1723TH is a single N-channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MOSFET Technology to deliver high performance in on-state resistance and fast switching. It offers excellent quality and is suitable for synchronous rectification in server and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Line: MDP1723TH
- Technology: Trench MOSFET
- Certifications: RoHS Status: Halogen Free
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
| Absolute Maximum Ratings | VDSS | 40 | V | ||||
| VGSS | ±20 | V | |||||
| ID (TC=25oC, Silicon Limited) | 191 | A | |||||
| ID (TC=25oC, Package Limited) | 120 | A | |||||
| ID (TC=100oC) | 120 | A | |||||
| IDM | 480 | A | |||||
| PD (TC=25oC) | 138.9 | W | |||||
| PD (TC=100oC) | 55.6 | W | |||||
| Thermal Characteristics | RJA | 50.0 | oC/W | (1) | |||
| RJC | 1.3 | oC/W | |||||
| Static Characteristics | BVDSS | 40 | V | ID = 250µA, VGS = 0V | 40 | - | - |
| VGS(th) | V | VDS = VGS, ID = 250µA | 2.0 | - | 4.0 | ||
| IDSS | µA | VDS = 32V, VGS = 0V | - | - | 1.0 | ||
| IGSS | ±µA | VGS = ±20V, VDS = 0V | - | - | ±0.1 | ||
| RDS(ON) | mΩ | VGS = 10V, ID = 50A | - | 1.9 | 2.3 | ||
| gfs | S | VDS = 10V, ID = 50A | - | 111 | - | ||
| Dynamic Characteristics | Qg | nC | VDS = 20V, ID = 50A, VGS = 10V | - | 88.3 | - | |
| Qgs | - | 22.9 | - | ||||
| Qgd | - | 16.5 | - | ||||
| Ciss | pF | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 5755 | - | ||
| Crss | - | 203 | - | ||||
| Coss | - | 1830 | - | ||||
| Switching Characteristics | td(on) | ns | VGS = 10V, VDS =20V, ID = 50A , RG = 3.0Ω | - | 24.3 | - | |
| tr | - | 14.7 | - | ||||
| td(off) | - | 84.8 | - | ||||
| tf | - | 42.7 | - | ||||
| Gate Resistance | Rg | Ω | f= 1 MHz | - | 3.0 | - | |
| Drain-Source Body Diode Characteristics | VSD | V | IS = 50A, VGS = 0V | - | 0.9 | 1.2 | |
| trr | ns | IF = 50A, dl/dt = 100A/µs | - | 55.7 | - | ||
| Qrr | nC | - | 82.0 | - | |||
| Ordering Information | Part Number | MDP1723TH | |||||
| Temp. Range | -55~150°C | ||||||
| Package | TO-220 | ||||||
| Packing | Tube | ||||||
| RoHS Status | Halogen Free |
2509121533_MagnaChip-Semicon-MDP1723TH_C22691495.pdf
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