Power Switching Component MagnaChip Semicon MBQ40T120FESTH 1200V FieldStop Trench IGBT for Industrial
Key Attributes
Model Number:
MBQ40T120FESTH
Product Custom Attributes
Td(off):
308ns
Pd - Power Dissipation:
357W
Td(on):
65ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
107pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Operating Temperature:
-55℃~+150℃
Gate Charge(Qg):
341nC@15V
Reverse Recovery Time(trr):
100ns
Switching Energy(Eoff):
540uJ
Turn-On Energy (Eon):
1.96mJ
Input Capacitance(Cies):
6.03nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
206pF
Mfr. Part #:
MBQ40T120FESTH
Package:
TO-247
Product Description
Product Overview
The Magnachip MBQ40T120FES is a 1200V FieldStop Trench IGBT designed for high-speed switching and low power loss. Leveraging Magnachip's advanced Field Stop Trench IGBT Technology, this device offers low VCE(SAT), superior switching performance, and excellent quality. It features an ultra-soft, fast recovery anti-parallel diode with ultra-narrowed VF distribution control and a positive temperature coefficient for easy paralleling. The MBQ40T120FES is ideal for applications such as Power Factor Correction (PFC), Uninterruptible Power Supplies (UPS), and inverters.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Technology: FieldStop Trench IGBT
- Package: TO-247
- Certifications: Pb Free (RoHS Status)
- Date: Jul. 2021
- Version: 1.3
Technical Specifications
| Category | Specification | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings | Collector-emitter voltage (VCES) | 1200 | V | |
| Gate-emitter voltage (VGES) | 20 | V | ||
| Collector current (IC) @ TC=25C | 80 | A | ||
| Collector current (IC) @ TC=100C | 40 | A | ||
| Pulsed collector current (ICM) | 160 | A | Pulse time limited by Tjmax | |
| Diode forward current (IF) @ TC = 100C | 40 | A | ||
| Diode pulsed current (IFM) | 160 | A | Pulse time limited by Tjmax | |
| Power dissipation (PD) @ TC=25C | 357 | W | ||
| Power dissipation (PD) @ TC=100C | 142 | W | ||
| Short circuit withstand time (tsc) | 10 | s | VCE = 600V, VGE = 15V, TC = 150C | |
| Operating Junction temperature range (TJ) | -55~150 | C | ||
| Storage temperature range (Tstg) | -55~150 | C | ||
| Thermal Characteristics | Thermal resistance junction-to-ambient (RJA) | 40 | C/W | |
| Thermal resistance junction-to-case for IGBT (RJC) | 0.35 | C/W | ||
| Thermal resistance junction-to-case for Diode (RJC) | 0.8 | C/W | ||
| Electrical Characteristics | Collector-emitter breakdown voltage (BVCES) | 1200 | V | IC = 1mA, VGE = 0V |
| Gate-emitter threshold voltage (VGE(th)) | 4.5 - 6.5 | V | VCE = VGE, IC = 1mA | |
| Zero gate voltage collector current (ICES) | - | 1 | mA | VCE = 1200V, VGE = 0V |
| Gate-emitter leakage current (IGES) | - | 250 | nA | VGE = 20V, VCE = 0V |
| Collector-emitter saturation voltage (VCE(sat)) @ TC = 25C | - 2.4 | V | IC = 40A, VGE = 15V | |
| Collector-emitter saturation voltage (VCE(sat)) @ TC = 150C | - 2.45 | V | IC = 40A, VGE = 15V | |
| Total gate charge (Qg) | - 341 | nC | VCE = 600V, IC = 40A, VGE = 15V | |
| Gate-emitter charge (Qge) | - 52 | |||
| Gate-collector charge (Qgc) | - 126 | |||
| Input capacitance (Cies) | - 6030 | pF | VCE = 30V, VGE = 0V, f = 1MHz | |
| Reverse transfer capacitance (Cres) | - 107 | pF | ||
| Output capacitance (Coes) | - 206 | pF | ||
| Switching Characteristics @ TC = 25C | Turn-on delay time (td(on)) | 65 - | ns | VGE = 15V, VCC = 600V, IC = 40A, RG = 10, Inductive Load |
| Rise time (tr) | 55 - | ns | ||
| Turn-off delay time (td(off)) | 308 - | ns | ||
| Fall time (tf) | 40 - | ns | ||
| Turn-on switching energy (Eon) | 1.96 - | mJ | ||
| Turn-off switching energy (Eoff) | 0.54 - | mJ | ||
| Total switching energy (Ets) | 2.50 - | mJ | ||
| Reverse recovery time (trr) | - 100 | ns | IF = 40A, di/dt = 200A/ s | |
| Diode Characteristics | Forward voltage (VF) @ TC = 25C | - 3.0 | V | IF = 40A |
| Forward voltage (VF) @ TC = 150C | - 2.45 | V | IF = 40A | |
| Reverse recovery charge (Qrr) @ TC = 25C | - 350 | nC | IF = 40A, di/dt = 200A/ s | |
| Reverse recovery charge (Qrr) @ TC = 150C | - 900 | nC | IF = 40A, di/dt = 200A/ s | |
| Ordering Information | Part Number | MBQ40T120FESTH | ||
| Marking | 40T120FES | |||
| Temp. Range | -55~150C | |||
| Package | TO-247 | |||
| Packing | Tube | |||
| RoHS Status | Pb Free |
2409272232_MagnaChip-Semicon-MBQ40T120FESTH_C20611991.pdf
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