Switching Amplification Transistor LRC LBC807-25WT1G PNP Type with 45 Volt Collector Emitter Voltage

Key Attributes
Model Number: LBC807-25WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC807-25WT1G
Package:
SC-70(SOT-323)
Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. S-LBC807-25WT1G is a PNP Silicon general-purpose transistor designed for switching and amplification applications. It offers a collector current capability of -500 mA and a collector-emitter voltage of -45 V. This transistor is the PNP complement to the LBC807 Series and is AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Product Series: LBC807 Series
  • Material Compliance: RoHS
  • Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix)

Technical Specifications

ModelV CEO (max)I C (cont.)V CE(sat) (max)h FE (min)f T (min)C obo (typ)PackageMarkingShipping
S-LBC807-25WT1G-45 V-500 mAdc-0.7 V (IC= -500 mA, IB = -50 mA)160 (IC = -10 mA, VCE = -1.0 V)100 MHz (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz)10 pF (VCB = -10 V, f = 1.0 MHz)SOT3235B3000/Tape&Reel
S-LBC807-25WT3G-45 V-500 mAdc-0.7 V (IC= -500 mA, IB = -50 mA)160 (IC = -10 mA, VCE = -1.0 V)100 MHz (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz)10 pF (VCB = -10 V, f = 1.0 MHz)SOT3235B10000/Tape&Reel

1912111437_LRC-LBC807-25WT1G_C383185.pdf

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