N Channel MOSFET MASPOWER MS170N65HGF4 Featuring Fast Intrinsic Diode and High Avalanche Energy for Industrial
Key Attributes
Model Number:
MS170N65HGF4
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
170A
RDS(on):
18mΩ@10V,35A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
15nF
Pd - Power Dissipation:
860W
Input Capacitance(Ciss):
25nF@25V
Gate Charge(Qg):
360nC@10V
Mfr. Part #:
MS170N65HGF4
Package:
SOT-227
Product Description
Product Overview
The MS170N65HGF4 H1.02 is an N-Channel power MOSFET from Maspower, featuring low RDS(on), high current handling capability, a fast intrinsic diode, and avalanche rating. It is designed for applications such as DC-DC converters, UPS, AC motor drives, battery chargers, and switched-mode and resonant-mode power supplies.
Product Attributes
- Brand: Maspower
- Model: MS170N65HGF4 H1.02
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Type | Max | Unit |
| Absolute Ratings | VDSS | 650 | V | |||
| ID | 170 | A | ||||
| IDM* | 340 | A | ||||
| VGSS | 30 | V | ||||
| EAS | Single Pulsed Avalanche Energy | 5 | J | |||
| PD | 860 | W | ||||
| Tj,TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Off-Characteristics | BVDSS | ID=3mA,VGS=0V | 650 | - | - | V |
| IDSS | VDS=650V,VGS=0V Tj=25 | - | - | 50 | A | |
| IGSSF | VDS=0V,VGS=30V | - | - | 200 | nA | |
| IGSSR | VDS=0V,VGS=-30V | - | - | -200 | nA | |
| On-Characteristics | VGS(th) | VDS=VGS,ID=250uA | 3.0 | - | 5.0 | V |
| RDS(ON) | VGS=10V,ID=35A | - | 18 | - | m | |
| Forward transconductance | Gfs | VDS=10V,ID=60A | - | 90 | - | S |
| Dynamic Characteristics | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 25 | - | nF |
| Coss | - | 15 | - | nF | ||
| Crss | - | 10 | - | pF | ||
| Switching Characteristics | td(on) | VDD=325V,ID=85A Rg=1 | - | 60 | - | ns |
| tr | - | 13 | - | ns | ||
| Td(off) | - | 120 | - | ns | ||
| tf | - | 5 | - | ns | ||
| Total Gate Charge | Qg | VDS=325V, ID=85A, VGS=10V | - | 360 | - | nC |
| Qgs | - | 135 | - | nC | ||
| Qgd | - | 98 | - | nC | ||
| Drain-Source Diode Characteristics | VSD | VGS=0V,IS=100A, (note1) | - | - | 1.4 | V |
| IS | Maximum Continuous Drain-Source Diode Forward Current | - | 170 | - | A | |
| Reverse recovery | trr | IF=85A dIF/dt=100A/us VR=100V | - | 200 | - | ns |
| Reverse recovery charge | Qrr | - | 750 | - | nC | |
| Thermal Characteristic | RJC | Thermal Resistance, Junction-to-Case | 0.145 | /W |
2411261924_MASPOWER-MS170N65HGF4_C7429886.pdf
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