High voltage MOSFET MASPOWER MS50N85IDC0 designed for continuous and pulsed drain current operation
Key Attributes
Model Number:
MS50N85IDC0
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
850V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.01nF
Pd - Power Dissipation:
890W
Gate Charge(Qg):
178nC@10V
Mfr. Part #:
MS50N85IDC0
Package:
TO-247
Product Description
Product Overview
The MS50N85IDC0 H1.02 Maspower is a high-performance power semiconductor designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitance, and very low on-resistance, making it ideal for use in UPS, PV Inverters, and general switching applications.
Product Attributes
- Brand: Maspower
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage (VGS = 0) | VDS | 850 | V | |||
| Gate- source voltage | VGS | ±30 | ||||
| Drain current (continuous) at TC = 25 °C | ID | 50 | A | |||
| Drain current (continuous) at TC = 100 °C | ID | 28 | ||||
| Drain current (pulsed) | IDM | 125 | A | |||
| Continuous Pulse Avalanche Current | IAR | 25 | A | |||
| Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) | EAS | 1000 | mJ | |||
| Total dissipation at TC = 25 °C | PTOT | 890 | W | |||
| Derating factor | 2.23 | W/°C | ||||
| Operating junction temperature | TJ | -55 | 150 | °C | ||
| Storage temperature | Tstg | °C | ||||
| Maximum lead temperature for soldering purpose | TL | 260 | ||||
| Isolation Voltage for terminal to case | VISO | 3.0 | KV | |||
| Electrical Characteristics (Tvj = 25°C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | ID = 1 mA, VGS = 0 | 850 | V | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS = Max rating | 50 | µA | ||
| VDS=Max rating, TC=125 °C | 3000 | |||||
| Gate-body leakage current (VDS = 0) | IGSS | VGS = ± 30 V | ± 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 µA | 3 | 4 | 5 | V |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID = 15A @25°C | 106 | 130 | mΩ | |
| Dynamic | ||||||
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 3010 | pF | ||
| Output capacitance | Coss | 1200 | ||||
| Reverse transfer capacitance | Crss | 10 | ||||
| Gate input resistance | Rg | f=1MHz Gate DC Bias=0 Test signal level=20mV open drain | 2.0 | Ω | ||
| Forward transconductance | Gfs | VDS=10V,ID=25A | 19 | 32 | S | |
| Total gate charge | Qg | VDD=425V,ID=25A VGS=10V | 178 | nC | ||
| Gate-source charge | Qgs | 23 | ||||
| Gate-drain charge | Qgd | 63 | ||||
| Gate plateau voltage | VP | 6 | V | |||
| Switching times | ||||||
| Turn-on delay time | td(on) | VDD = 425 V, ID = 25A, RG = 10Ω, VGS = 10 V | 31 | ns | ||
| Rise time | tr | 43 | ||||
| Turn-off-delay time | td(off) | 85 | ||||
| Fall time | tf | 13 | ||||
| Source drain diode | ||||||
| Forward on voltage | VSD | ISD= 1 A, VGS= 0V | 0.68 | 1.2 | V | |
| Reverse recovery time | trr | ISD= 25A, di/dt= 100A/µs VR= 100 V | 210 | ns | ||
| Reverse recovery charge | Qrr | 1.75 | µC | |||
| Reverse recovery current | IRRM | 15 | A | |||
| Thermal data | ||||||
| Thermal resistance junction-case max | Rthj-case | 0.21 | °C/W | |||
| Thermal resistance junction-ambient max | Rthj-amb | 40 | ||||
2408021404_MASPOWER-MS50N85IDC0_C37635848.pdf
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