TO247 package MOSFET MASPOWER MS25N100HCC0 offering 25A continuous current and low Crss for switching
Key Attributes
Model Number:
MS25N100HCC0
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
25A
RDS(on):
260mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3pF
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
520W
Output Capacitance(Coss):
160pF
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
MS25N100HCC0
Package:
TO-247
Product Description
Product Overview
The MS25N100HCC0 H1.02 from Maspower is a high-performance power semiconductor designed for demanding switching applications. It features a high breakdown voltage (VDS=1000V) and a continuous drain current of 25A, with low Crss and low gate charge for improved efficiency. Its enhanced dv/dt capability makes it suitable for high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge configurations, and UPS systems.
Product Attributes
- Brand: Maspower
- Model: MS25N100HCC0 H1.02
- Package: TO-247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||
| Transient Gate-Source Voltage | VGSM | ±30 | V | |||
| Continuous Gate-Source Voltage | VGSS | ±20 | V | |||
| Drain Current-continuous | ID | TC=25 | 25 | A | ||
| Drain Current-continuous | ID | TC=100 | 17 | A | ||
| Drain Current-pulse(note1) | IDM | 100 | A | |||
| Single Pulsed Avalanche Energy(note2) | EAS | 2000 | mJ | |||
| Repetitive Avalanche Current(note1) | IAR | 20 | A | |||
| Maximum Power Dissipation | PD | TC=25 | 520 | W | ||
| Maximum Power Dissipation | PD | TC=100 | 208 | W | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | ~ | +150 | ||
| Soldering temperature, wave soldering only allowed at leads.(1.6mm for 10s) | TL | 260 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A,VGS=0V | 1000 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=25 | - | - | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=125 | - | - | 100 | µA |
| Gate-Body Leakage | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=8A (note3) | - | 0.26 | 0.34 | Ω |
| Forward Transconductance | gfs | VDS=40V,ID=8A (note3) | - | 28.4 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=100V, VGS=0V, f=1.0MHz(note4) | - | 1500 | - | pF |
| Output capacitance | Coss | - | 160 | - | pF | |
| Reverse transfer capacitance | Crss | - | 3 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDS=50V,ID=25A, VGS=10V,RG=4.7Ω | - | 35 | - | ns |
| Turn-On rise time | tr | - | 30 | - | ns | |
| Turn-Off delay time | td(Off) | - | 75 | - | ns | |
| Turn-Off rise time | tf | - | 18 | - | ns | |
| Total Gate Charge | Qg | VDS=800V,ID=25A, VGS=10V(note4) | - | 56 | - | nC |
| Gate-Source charge | Qgs | - | 12 | - | nC | |
| Gate-Drain charge | Qgd | - | 32 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Continuous Drain-Source Diode Forward voltage | VSD | VGS=0V,IS=1A (note3) | - | 0.71 | 1.2 | V |
| Diode Forward Current | IS | - | - | 25 | A | |
| Reverse recovery time | Trr | IS=25A,diF/dt=100A/μs VR=60V,VGS=0V | - | 650 | - | ns |
| Reverse recovery charge | Qrr | - | 12 | - | μC | |
| Reverse recovery current | Irr | - | 20 | - | A | |
| Thermal Characteristics | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 0.24 | /W | |||
| Thermal Resistance,junction to Ambient | Rth(j-A) | 40 | /W | |||
2508261540_MASPOWER-MS25N100HCC0_C50726506.pdf
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