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quality NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LMUN2232LT1G SOT23 Package factory
quality NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LMUN2232LT1G SOT23 Package factory

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LMUN2232LT1G SOT23 Package

Key Attributes
Model Number: LMUN2232LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
6.1kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2232LT1G
Package:
SOT-23
Product Description

Product Overview

The LMUN2232LT1G and S-LMUN2232LT1G are NPN Silicon Surface Mount Transistors with monolithic bias resistor networks. These devices simplify circuit design, reduce board space, and decrease component count. They are compliant with RoHS requirements and Halogen Free. The S-prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Certifications: AEC-Q101 qualified and PPAP capable (S-prefix models)
  • Device Type: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
  • Package Type: SOT23 (TO-236)
  • Origin: China (implied by manufacturer name and location)

Technical Specifications

Parameter Symbol LMUN2232LT1G S-LMUN2232LT1G Unit Notes
Device Marking and Resistor Values
Device Marking A8J
Resistor R1 R1(K) 4.7 K
Resistor R2 R2(K) 4.7 K
Resistor Ratio R1/R2 0.8 - 1.2
Maximum Ratings (Ta = 25C)
Collector-Emitter Voltage VCEO 50 V
Collector Current Continuous IC 100 mA
Collector-Base Voltage VCBO 50 V
Thermal Characteristics
Total Device Dissipation, FR5 Board PD 1.5 W @ TA = 25C, Note 1
Derate above 25C mW/C
Thermal Resistance, JunctiontoAmbient RJA C/W Note 1
Junction and Storage Temperature TJ, Tstg -55 ~ +150 C
Electrical Characteristics (Ta= 25C)
OFF Characteristics
Collector-Emitter Breakdown Voltage VBR(CEO) 50 - V (IC = 2.0 mA, IB = 0)
Collector-Base Breakdown Voltage VBR(CBO) 50 - V (IC = 10 A, IE = 0)
Collector-Base Cutoff Current ICBO - 50 nA (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current ICEO - 50 nA (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current IEBO - 0.25 mA (VEB = 6.0 V, IC = 0)
ON Characteristics (Note 2.)
DC Current Gain HFE 15 - 30 (IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage VCE(sat) - 0.25 V (IC = 10 mA, IB = 1 mA)
Input Resistor R1 3.3 K
Output Voltage (on) VOL - 0.2 V (VCC = 5.0 V, VB = 2.5 V, RL =1.0K)
Output Voltage (on) VOH - 0.8 V (VCC = 5.0 V, VB = 0.25 V, RL =1.0K)
Shipping
Quantity 3000/Tape&Reel
Outline and Dimensions
Dimension Symbol Min (mm) Nom (mm) Max (mm) Min (in)
A A 0.89 1 1.11 0.035
A1 A1 0.01 0.06 0.1 0.001
b b 0.35 0.54 0.69 0.014
c c 0.09 0.13 0.18 0.003
D D 2.80 2.9 3.04 0.11
E E 1.20 1.3 1.4 0.047
e e 1.78 1.9 2.04 0.07
HE HE 2.10 2.4 2.64 0.083
L L 0.10 0.2 0.3 0.004
L1 L1 0.37 0.44 0.5 0.015

Notes:

  1. FR-5 @ Minimum Pad.
  2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.

1809192321_LRC-LMUN2232LT1G_C129120.pdf

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