High voltage MASPOWER MS1N250HGC0 suitable for industrial power supplies and photovoltaic inverters
Product Overview
The MS1N250HGC0 H1.02 is a high-performance Maspower component designed for demanding switching applications. It features 100% avalanche testing, a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, ensuring high-speed switching capabilities. This product is ideal for High Voltage Power Supplies, PV Inverters, and general switching applications.
Product Attributes
- Brand: Maspower
- Model: MS1N250HGC0 H1.02
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Electrical ratings | VDS | VGS = 0 | 2500 | V | ||
| VGS | 30 | |||||
| ID | TC = 25 C | 1 | A | |||
| ID | TC = 100 C | 0.6 | ||||
| Electrical Characteristics | V(BR)DSS | ID = 250 A, VGS = 0 | 2500 | V | ||
| IDSS | VDS = Max rating | 100 | 1000 | A | ||
| Dynamic | Ciss | VDS=25V,f=1MHz,VGS=0 | 116 | pF | ||
| Coss | VDS=25V,f=1MHz,VGS=0 | 8 | pF | |||
| Switching times | td(on) | Resistive load VDD = 1250 V, ID =0.5A, RG = 4.7 , VGS = 10 V | 19 | ns | ||
| tr | Resistive load VDD = 1250 V, ID =0.5A, RG = 4.7 , VGS = 10 V | 19 | ||||
| Source drain diode | VSD | ISD= 1A, VGS= 0 | 1.3 | V | ||
| trr | ISD= 1A, di/dt=50A/s VDD= 100 V | 1500 | ns | |||
| Qrr | ISD= 1A, di/dt=50A/s VDD= 100 V | 9 | C | |||
| Thermal data | Rthj-case | 0.43 | W/ |
2411261900_MASPOWER-MS1N250HGC0_C19724671.pdf
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