High voltage MASPOWER MS1N250HGC0 suitable for industrial power supplies and photovoltaic inverters

Key Attributes
Model Number: MS1N250HGC0
Product Custom Attributes
Drain To Source Voltage:
2.5kV
Current - Continuous Drain(Id):
1A
RDS(on):
30Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
6.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3pF
Input Capacitance(Ciss):
116pF
Output Capacitance(Coss):
8pF
Pd - Power Dissipation:
291W
Gate Charge(Qg):
7.4nC
Mfr. Part #:
MS1N250HGC0
Package:
TO-247
Product Description

Product Overview

The MS1N250HGC0 H1.02 is a high-performance Maspower component designed for demanding switching applications. It features 100% avalanche testing, a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, ensuring high-speed switching capabilities. This product is ideal for High Voltage Power Supplies, PV Inverters, and general switching applications.

Product Attributes

  • Brand: Maspower
  • Model: MS1N250HGC0 H1.02

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Electrical ratingsVDSVGS = 02500V
VGS 30
IDTC = 25 C1A
IDTC = 100 C0.6
Electrical CharacteristicsV(BR)DSSID = 250 A, VGS = 02500V
IDSSVDS = Max rating1001000A
DynamicCissVDS=25V,f=1MHz,VGS=0116pF
CossVDS=25V,f=1MHz,VGS=08pF
Switching timestd(on)Resistive load VDD = 1250 V, ID =0.5A, RG = 4.7 , VGS = 10 V19ns
trResistive load VDD = 1250 V, ID =0.5A, RG = 4.7 , VGS = 10 V19
Source drain diodeVSDISD= 1A, VGS= 01.3V
trrISD= 1A, di/dt=50A/s VDD= 100 V1500ns
QrrISD= 1A, di/dt=50A/s VDD= 100 V9C
Thermal dataRthj-case0.43W/

2411261900_MASPOWER-MS1N250HGC0_C19724671.pdf

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