High Voltage Planar Process NPN MOS MASPOWER MS12N120HJC0 with Ultra Low RDS on and Low Gate Charge
Key Attributes
Model Number:
MS12N120HJC0
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
3.15nF
Pd - Power Dissipation:
290W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
MS12N120HJC0
Package:
TO-247
Product Description
Product Overview
The MS12N120HJC0 is a Planar Process NPN MOS H1.05 Maspower device designed for high-voltage applications. It features a VDS of 1200V and ID of 12A with an ultra-low RDS(on) of less than 3 at VGS=10V, achieved through a high-density cell design. This device offers low gate charge and improved dv/dt capability, making it suitable for various high-voltage power supply and pulse power applications.
Product Attributes
- Brand: Maspower
- Product Type: NPN MOS
- Process: Planar Process
- Model Series: H1.05
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | VDSS | 1200 | V | |||
| VGSS | ±30 | V | ||||
| ID | 12 | A | ||||
| IDM | 30 | A | ||||
| EAS | Single Pulsed Avalanche Energy | 500 | mJ | |||
| PD | TC=25 Derate above 25 | 290 | W | |||
| TJ,TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| Electrical Characteristics | BVDSS | ID=1mA,VGS=0V | 1200 | - | - | V |
| IDSS | VDS=VDSS,VGS=0V | - | - | 25 | μA | |
| IGSS | VGS=±30VVDS=0V | - | - | ±100 | nA | |
| VGS(th) | VDS=VGS,ID=250μA | 2.5 | - | 5.5 | V | |
| RDS(ON) | VGS=10V,ID=1A | - | 2 | 3 | Ω | |
| Dynamic Characteristics | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 3150 | - | pF |
| Coss | - | 300 | - | pF | ||
| Crss | - | 25 | - | pF | ||
| Switching Characteristics | td(on) | VDS=600V,ID=6A, VGS=10V | - | 34 | - | ns |
| tr | - | 25 | - | ns | ||
| td(Off) | - | 62 | - | ns | ||
| tf | - | 34 | - | ns | ||
| Total Gate Charge | Qg | VDS=600V,ID=6A, VGS=10V | - | 85 | - | nC |
| Qgs | - | 14 | - | nC | ||
| Qgd | - | 48 | - | nC | ||
| Diode Characteristics | VSD | VGS=0V,IS=12A | 0.5 | - | 1.2 | V |
| IS | TC=25 | - | - | 12 | A | |
| Trr | IS=6A,dI/dT=100A/μS VR=100V,VGS=0V | - | - | 300 | nS | |
| Reverse Recovery Charge | Qrr | - | 0.5 | - | μC | |
| Thermal Characteristic | Rth(j-C) | 0.4 | /W |
2411261919_MASPOWER-MS12N120HJC0_C5139253.pdf
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