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quality NPN and PNP Silicon Transistors Integrated Dual Bias Resistor LRC S-LMUN5311DW1T1G in SOT363 Package factory
quality NPN and PNP Silicon Transistors Integrated Dual Bias Resistor LRC S-LMUN5311DW1T1G in SOT363 Package factory

NPN and PNP Silicon Transistors Integrated Dual Bias Resistor LRC S-LMUN5311DW1T1G in SOT363 Package

Key Attributes
Model Number: S-LMUN5311DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
-
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LMUN5311DW1T1G
Package:
SOT-363
Product Description

Product Overview

The LMUN5311DW1T1G series are Dual Bias Resistor Transistors (BRTs) featuring NPN and PNP silicon transistors with monolithic bias resistor networks. These devices integrate a single transistor and its external bias network into a single package, simplifying circuit design, reducing board space, and lowering component count. They are ideal for low-power surface-mount applications where space is limited. The series is available in the SOT-363/SC-88 package and includes options compliant with AEC-Q101 qualification and PPAP capability for automotive and other demanding applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements and Halogen Free.
  • Qualification: AEC-Q101 qualified and PPAP capable (for S- prefix series).

Technical Specifications

Series/Model Package Device Marking R1 (k) R2 (k) Shipping (Units/Reel)
LMUN5311DW1T1G SOT-363 11 10 10 3000/Tape&Reel
LMUN5311DW1T3G SOT-363 11 10 10 10000/Tape&Reel
LMUN5312DW1T1G SOT-363 12 22 22 3000/Tape&Reel
LMUN5312DW1T3G SOT-363 12 22 22 10000/Tape&Reel
LMUN5313DW1T1G SOT-363 13 47 47 3000/Tape&Reel
LMUN5313DW1T3G SOT-363 13 47 47 10000/Tape&Reel
LMUN5314DW1T1G SOT-363 14 10 47 3000/Tape&Reel
LMUN5314DW1T3G SOT-363 14 10 47 10000/Tape&Reel
LMUN5315DW1T1G SOT-363 15 10 - 3000/Tape&Reel
LMUN5315DW1T3G SOT-363 15 10 - 10000/Tape&Reel
LMUN5316DW1T1G SOT-363 16 4.7 - 3000/Tape&Reel
LMUN5316DW1T3G SOT-363 16 4.7 - 10000/Tape&Reel
LMUN5330DW1T1G SOT-363 30 1 1 3000/Tape&Reel
LMUN5330DW1T3G SOT-363 30 1 1 10000/Tape&Reel
LMUN5331DW1T1G SOT-363 31 2.2 2.2 3000/Tape&Reel
LMUN5331DW1T3G SOT-363 31 2.2 2.2 10000/Tape&Reel
LMUN5332DW1T1G SOT-363 32 4.7 4.7 3000/Tape&Reel
LMUN5332DW1T3G SOT-363 32 4.7 4.7 10000/Tape&Reel
LMUN5333DW1T1G SOT-363 33 4.7 47 3000/Tape&Reel
LMUN5333DW1T3G SOT-363 33 4.7 47 10000/Tape&Reel
LMUN5334DW1T1G SOT-363 34 22 47 3000/Tape&Reel
LMUN5334DW1T3G SOT-363 34 22 47 10000/Tape&Reel
LMUN5335DW1T1G SOT-363 35 2.2 47 3000/Tape&Reel
LMUN5335DW1T3G SOT-363 35 2.2 47 10000/Tape&Reel
Maximum Ratings (TA = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Thermal Characteristics (TA = 25C unless otherwise noted)
Characteristic Symbol Max Unit
Total Device Dissipation (One Junction Heated) PD 187 (Note 1) mW
Thermal Resistance (Junction-to-Ambient, One Junction Heated) RJA 670 (Note 1) C/W
Total Device Dissipation (Both Junctions Heated) PD 250 (Note 1) mW
Thermal Resistance (Junction-to-Ambient, Both Junctions Heated) RJA 493 (Note 1) C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C
Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 35 - 350 -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) - - 0.25 Vdc
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc

2412052036_LRC-S-LMUN5311DW1T1G_C559098.pdf

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