High Current MOSFET MASPOWER MS220N10JDP0 Suitable for Switched Mode Power Supplies and DC DC Converters
Key Attributes
Model Number:
MS220N10JDP0
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
220A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
1 N-channel
Input Capacitance(Ciss):
12.3nF
Output Capacitance(Coss):
1.435nF
Pd - Power Dissipation:
272W
Gate Charge(Qg):
176nC@10V
Mfr. Part #:
MS220N10JDP0
Package:
TOLL-8
Product Description
Product Overview
The MS220N10JDT0(P0) H1.01 Maspower is a high-performance power MOSFET designed for demanding applications. It features low RDS(on), fast switching speeds, and 100% avalanche tested for reliability. Its low package inductance and low intrinsic rectifier contribute to efficient operation. This device is suitable for a wide range of power electronics applications including DC-DC converters, battery chargers, switched-mode power supplies, AC motor drives, and uninterruptible power supplies.
Product Attributes
- Brand: Maspower
- Model: MS220N10JDT0(P0) H1.01
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Drain Current -continuous | ID | T=25 | 220 | A | ||
| Drain Current -continuous | ID | T=100 | 117 | A | ||
| Drain Current - pulse (note 1) | IDM | 890 | A | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Single Pulsed Avalanche Energy (note 2) | EAS | 1881.6 | mJ | |||
| Avalanche Current(note 1) | IAR | 87 | A | |||
| Peak Diode Recovery dv/dt(note 3) | dv/dt | 45 | V/ns | |||
| Power Dissipation | PD | TC=25 | 272 | W | ||
| Power Dissipation | PD | TC=100 | 132 | W | ||
| Operating Temperature and Storage Temperature Range | Tj,TSTG | -55 | ~ | +150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Electrical Characteristics (TCASE=25 unless otherwise specified) | ||||||
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 100 | - | - | V |
| Drain cut-off current | IDSS | VDS=100V,Tj=25 | - | - | 1 | A |
| Drain cut-off current | IDSS | VDS=100V,Tj=125 | - | - | 500 | A |
| Gate-body leakage current | IGSS | VDS=0V,VGS=20V | - | - | 100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=50A (note 4) | - | 1.9 | 2.45 | m |
| Forward Transconductance | gfs | VDS =10V , ID=50A (note 4) | - | 9 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=50V, VGS=0V, f=1.0MHz | - | 12.3 | - | nF |
| Output capacitance | Coss | - | 1435 | - | pF | |
| Reverse transfer capacitance | Crss | - | 52 | - | pF | |
| Gate Resistance | Rg | F=1MHz | - | 2.0 | - | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=50V,ID=20A, RG=2 VGS=10V | - | 36 | - | ns |
| Turn-On rise time | tr | - | 25 | - | ns | |
| Turn-Off delay time | Td(off) | - | 52 | - | ns | |
| Turn-Off Fall time | tf | - | 29 | - | ns | |
| Total Gate Charge | Qg | VDS=50V,ID=50A, VGS=10V(note5) | - | 176 | - | nC |
| Gate-Source charge | Qgs | - | 56.2 | - | nC | |
| Gate-Drain charge | Qg d | - | 41.1 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Voltage | VSD | VGS=0V,IS=50A (note 4) | - | - | 1.2 | V |
| Continuous Drain-Source Current | IS | - | - | 220 | A | |
| Pulsed Drain-Source Current | ISM | - | - | 890 | A | |
| Reverse recovery time | trr | VGS=0V,IF=50A dIF/dt=100A/us | - | 35 | - | ns |
| Reverse recovery charge | Qrr | - | 123 | - | nC | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.46 | /W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | /W | |||
| Part Number | Silkscreen | Package |
| MS220N10JDT0 | MS220N10JDT0 | TO-220 |
| MS220N10JDP0 | MS220N10JDP0 | TOLL |
2508261540_MASPOWER-MS220N10JDP0_C50726504.pdf
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