Low saturation voltage NPN transistor LRC LBTN560Y3T1G with AEC Q101 qualification and PPAP capability

Key Attributes
Model Number: LBTN560Y3T1G
Product Custom Attributes
Transition Frequency(fT):
130MHz
Type:
NPN
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
LBTN560Y3T1G
Package:
SOT-89
Product Description

Product Overview

This NPN transistor offers low collector-emitter saturation voltage, high collector current capability and gain, leading to high efficiency and reduced heat generation. Its smaller PCB area requirement makes it suitable for space-constrained applications. Available in standard and S-prefix variants for automotive and other applications with unique site and control change requirements, it is AEC-Q101 qualified and PPAP capable. The material complies with RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified, PPAP capable (S-prefix)

Technical Specifications

ModelTypeVCEO (V)VCBO (V)VEBO (V)IC Continuous (A)IC Peak (A)PD (mW @ 25C)RJA (C/W)TJ, Tstg (C)ICBO (nA @ 150V)IEBO (nA @ 7V)VBR(CEO) (V @ 10mA)VBR(CBO) (V @ 100A)VBR(EBO) (V @ 100A)fT (MHz @ 10V, 100mA)Cobo (pF @ 10V, 1MHz)td(on) (ns @ 1A, 10V, 100mA)td(off) (ns @ 1A, 10V, 100mA)
LBTN560Y3T1GNPN transistor6015075205504.4-55~+1501002006015071303142760
S-LBTN560Y3T1GNPN transistor6015075205504.4-55~+1501002006015071303142760

2212131830_LRC-LBTN560Y3T1G_C5273348.pdf

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