Low saturation voltage NPN transistor LRC LBTN560Y3T1G with AEC Q101 qualification and PPAP capability
Product Overview
This NPN transistor offers low collector-emitter saturation voltage, high collector current capability and gain, leading to high efficiency and reduced heat generation. Its smaller PCB area requirement makes it suitable for space-constrained applications. Available in standard and S-prefix variants for automotive and other applications with unique site and control change requirements, it is AEC-Q101 qualified and PPAP capable. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified, PPAP capable (S-prefix)
Technical Specifications
| Model | Type | VCEO (V) | VCBO (V) | VEBO (V) | IC Continuous (A) | IC Peak (A) | PD (mW @ 25C) | RJA (C/W) | TJ, Tstg (C) | ICBO (nA @ 150V) | IEBO (nA @ 7V) | VBR(CEO) (V @ 10mA) | VBR(CBO) (V @ 100A) | VBR(EBO) (V @ 100A) | fT (MHz @ 10V, 100mA) | Cobo (pF @ 10V, 1MHz) | td(on) (ns @ 1A, 10V, 100mA) | td(off) (ns @ 1A, 10V, 100mA) |
| LBTN560Y3T1G | NPN transistor | 60 | 150 | 7 | 5 | 20 | 550 | 4.4 | -55~+150 | 100 | 200 | 60 | 150 | 7 | 130 | 31 | 42 | 760 |
| S-LBTN560Y3T1G | NPN transistor | 60 | 150 | 7 | 5 | 20 | 550 | 4.4 | -55~+150 | 100 | 200 | 60 | 150 | 7 | 130 | 31 | 42 | 760 |
2212131830_LRC-LBTN560Y3T1G_C5273348.pdf
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