Compact SOP 8 Package MATSUKI MEE4294-G Power MOSFET Designed for AC DC Adapter and PC Power Supplies
Key Attributes
Model Number:
MEE4294-G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
11.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
-
Input Capacitance(Ciss):
2.071nF
Pd - Power Dissipation:
2.8W
Gate Charge(Qg):
-
Mfr. Part #:
MEE4294-G
Package:
SOP-8
Product Description
Product Overview
The MEE4294-G is a preliminary N-Channel logic enhancement mode power MOSFET manufactured using high cell density EMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like synchronous rectification in AC/DC adapters or PC power supplies, where efficient load switching and low power loss are crucial within a compact surface-mount package. Key features include extremely low RDS(ON) and high DC current capability.
Product Attributes
- Brand: ME (Matsuki Electric/Force Mos)
- Product Code: MEE4294-G
- Technology: EMOS trench technology
- Certifications: Green product, Halogen free
- Package Type: SOP-8
- Origin: China (implied by "DCC ")
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 100 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current | ID | 11.3 | A | TC=25 |
| Continuous Drain Current | ID | 9 | A | TC=70 |
| Single pulse Avalanche Energy | EAS | 20 | mJ | L=0.1mH |
| Pulsed Drain Current | IDM | 45 | A | |
| Maximum Power Dissipation | PD | 2.8 | W | TC=25 |
| Maximum Power Dissipation | PD | 1.8 | W | TC=70 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 45 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 1 - 3 | V | VDS=VGS, ID=250A |
| Gate Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=100V, VGS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 10 - 12 | m | VGS=10V, ID= 11.5A |
| Drain-Source On-State Resistance | RDS(ON) | 13.5 - 15.5 | m | VGS=4.5V, ID= 9.5A |
| Diode Forward Voltage | VSD | 0.6 - 1 | V | IS=1A, VGS=0V |
| Input capacitance | Ciss | 2071 | pF | VDS=30V,VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 704 | pF | VDS=30V,VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 28 | pF | VDS=30V,VGS=0V, f=1.0MHz |
Applications
- Power Management
- Synchronous Rectification
- Load Switch
Note: * Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
2410121457_MATSUKI-MEE4294-G_C2693573.pdf
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