Power Field Effect Transistor MATSUKI ME50N06A G Featuring High Cell Density DMOS Trench Technology
Key Attributes
Model Number:
ME50N06A-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
-
Input Capacitance(Ciss):
2.28nF
Pd - Power Dissipation:
59.5W
Gate Charge(Qg):
-
Mfr. Part #:
ME50N06A-G
Package:
TO-252-2
Product Description
Product Overview
The ME50N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converters requiring low in-line power loss. Its super high density cell design offers extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Variants: ME50N06A (Pb-free), ME50N06A-G (Green product-Halogen free)
- Certifications: Halogen free (for -G variant)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25 | 35.1 | A | ||
| TC=70 | 28.1 | A | ||||
| Pulsed Drain Current | IDM | 140 | A | |||
| Maximum Power Dissipation | PD | TC=25 | 59.5 | W | ||
| TC=70 | 38.1 | W | ||||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Case* | RJC | 2.1 | /W | |||
| Static Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | |
| Gate Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | μA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=50A | 17 | 22 | mΩ | |
| Diode Forward Voltage | VSD | IS=50A, VGS=0V | 1.0 | 1.2 | V | |
| Dynamic Electrical Characteristics | ||||||
| Total Gate Charge | Qg | VDD=48V, VGS=10V, ID=50A | 37.1 | nC | ||
| Gate-Source Charge | Qgs | 10.9 | nC | |||
| Gate-Drain Charge | Qgd | VDD=48V, VGS=4.5V, ID=50A | 14.3 | nC | ||
| Gate Resistance | Rg | 2.1 | Ω | |||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 2280 | pF | ||
| Output Capacitance | Coss | 62 | pF | |||
| Reverse Transfer Capacitance | Crss | pF | ||||
| Turn-On Delay Time | td(on) | VDS=30V, VGS=10V, RG=3.6Ω, RL=30Ω | 27.7 | ns | ||
| Turn-On Rise Time | tr | 5.1 | ns | |||
| Turn-Off Delay Time | td(off) | 54.2 | ns | |||
| Turn-On Fall Time | tf | 5.5 | ns | |||
2410121455_MATSUKI-ME50N06A-G_C2693566.pdf
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