High voltage transistor LRC LMBT5551LT1G with RoHS compliance and automotive application readiness
Key Attributes
Model Number:
LMBT5551LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT5551LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT5550LT1G and LMBT5551LT1G are high voltage transistors in a SOT-23 package from LESHAN RADIO COMPANY, LTD. These devices are designed for general-purpose applications and offer reliable performance.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT-23
- Material Compliance: RoHS
- Special Prefix: S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Technical Specifications
| Model | Device Marking | Shipping | Collector-Emitter Voltage (VCEO) | Collector-Base Voltage (VCBO) | Emitter-Base Voltage (VEBO) | Collector Current - Continuous (IC) | Total Device Dissipation (PD) on FR-5 Board @ 25C | Thermal Resistance, Junction-to-Ambient (RJA) on FR-5 Board | Total Device Dissipation (PD) on Alumina Substrate @ 25C | Thermal Resistance, Junction-to-Ambient (RJA) on Alumina Substrate | Junction and Storage Temperature (TJ, Tstg) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | Collector-Base Breakdown Voltage (V(BR)CBO) | Emitter-Base Breakdown Voltage (V(BR)EBO) | Collector Cutoff Current (ICBO) | Emitter Cutoff Current (IEBO) | DC Current Gain (hFE) @ IC=1.0 mAdc, VCE=5.0 Vdc | DC Current Gain (hFE) @ IC=10 mAdc, VCE=5.0 Vdc | DC Current Gain (hFE) @ IC=50 mAdc, VCE=5.0 Vdc | Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=10 mAdc, IB=1.0 mAdc | Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=50 mAdc, IB=5.0 mAdc | Base-Emitter Saturation Voltage (VBE(sat)) @ IC=10 mAdc, IB=1.0 mAdc | Base-Emitter Saturation Voltage (VBE(sat)) @ IC=50 mAdc, IB=5.0 mAdc | Collector Emitter Cut-off (ICES) @ VCB=10 V | Collector Emitter Cut-off (ICES) @ VCB=75 V |
| LMBT5550LT1G / LMBT5550LT3G | M1F | 10000/Tape&Reel | 140 Vdc | 160 Vdc | 6.0 Vdc | 600 mAdc | 225 mW | 556 C/W | 300 mW | 417 C/W | -55 to +150 C | 140 Vdc | 160 Vdc | 6.0 Vdc | 100 nAdc (VCB=100V) / 50 nAdc (VCB=100V, TA=100C) | 50 nAdc | 60 | 60 | 20 | 0.15 Vdc | 0.20 Vdc | 1.0 Vdc | 1.0 Vdc | 50 nA | 100 nA |
| LMBT5551LT1G / LMBT5551LT3G | G1 | 10000/Tape&Reel | 160 Vdc | 180 Vdc | 6.0 Vdc | 600 mAdc | 225 mW | 556 C/W | 300 mW | 417 C/W | -55 to +150 C | 160 Vdc | 180 Vdc | 6.0 Vdc | 100 nAdc (VCB=120V) / 50 nAdc (VCB=120V, TA=100C) | 50 nAdc | 80 | 80 | 30 | 0.15 Vdc | 0.25 Vdc | 1.0 Vdc | 1.2 Vdc | 50 nA | 100 nA |
1809171611_LRC-LMBT5551LT1G_C49188.pdf
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