LMUN2113LT1G PNP Silicon Surface Mount Transistor Designed to Reduce Board Space and Component Count
Key Attributes
Model Number:
LMUN2113LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2113LT1G
Package:
SOT-23
Product Description
Product Overview
The LMUN2111LT1G Series are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network (BRT). Designed to replace individual transistors and external bias resistors, these devices simplify circuit design, reduce board space, and lower component count. They are ideal for low-power surface mount applications and are housed in a SOT-23 package with modified gull-winged leads for enhanced solderability and thermal stress absorption. The series is available on 8 mm embossed tape and reel.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: PNP Silicon
- Package: SOT-23
- Compliance: RoHS requirements
Technical Specifications
| Model Series | Device Marking | R1 (K) | R2 (K) | Shipping (7-inch/3000 units) | Shipping (13-inch/10,000 units) |
|---|---|---|---|---|---|
| LMUN2111LT1G | A6A | 10 | 10 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2110LT1G | A6O | 47 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2112LT1G | A6B | 22 | 22 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2113LT1G | A6C | 47 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2114LT1G | A6D | 10 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2115LT1G | A6E | 10 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2116LT1G | A6F | 4.7 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2130LT1G | A6G | 1.0 | 1.0 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2131LT1G | A6H | 2.2 | 2.2 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2132LT1G | A6J | 4.7 | 4.7 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2133LT1G | A6K | 4.7 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2134LT1G | A6L | 22 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | |
| Collector-Emitter Voltage | VCEO | 50 | Vdc | |
| Collector Current | IC | 100 | mAdc | |
| Total Device Dissipation (TA = 25C) | PD | 246 (Note 1.) / 400 (Note 2.) | mW | Derate above 25C: 1.5 (Note 1.) / 2.0 (Note 2.) C/W |
| Thermal Resistance Junction-to-Ambient | RJA | 508 (Note 1.) / 311 (Note 2.) | C/W | |
| Thermal Resistance Junction-to-Lead | RJL | 174 (Note 1.) / 208 (Note 2.) | C/W | |
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C | |
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | 100 nAdc | ||
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | 500 nAdc | ||
| Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) | IEBO | 0.5 (LMUN2111LT1G) etc. | mAdc | Values vary by model |
| Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) | V(BR)CBO | 50 | Vdc | |
| Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) | V(BR)CEO | 50 | Vdc | Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% |
| DC Current Gain (VCE = 10 V, IC = 5.0 mA) | hFE | 35 to 250 | Values vary by model | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | 0.25 Vdc | Values vary by model | |
| Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) | VOL | 0.2 | Vdc | Values vary by model |
| Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) | VOH | 4.9 | Vdc | Values vary by model |
| Input Resistor R1 | R1 | 0.7 to 61.1 | k | Values vary by model |
| Resistor Ratio R1/R2 | R1/R2 | 0.055 to 1.2 | Values vary by model |
Notes for Thermal Characteristics:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
Notes for Breakdown Voltages:
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Notes for ON Characteristics:
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
New Devices:
3. New devices. Updated curves to follow in subsequent data sheets.
2409302332_LRC-LMUN2113LT1G_C97848.pdf
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