PNP Silicon Transistor LRC LMUN2116LT1G with Integrated Bias Resistor Network in Compact SOT23 Package

Key Attributes
Model Number: LMUN2116LT1G
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
-
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2116LT1G
Package:
SOT-23
Product Description

Product Overview

The LMUN2111LT1G Series are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network (BRT). These devices are designed to replace single transistors with external resistor bias networks, simplifying circuit design, reducing board space, and lowering component count. The integrated BRT contains a single transistor with a series base resistor and a base-emitter resistor. Housed in a SOT-23 package, these transistors are suitable for low-power surface mount applications and can be soldered using wave or reflow methods. The modified gull-winged leads are designed to absorb thermal stress during soldering. Available in 8 mm embossed tape and reel packaging.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: PNP Silicon
  • Package: SOT-23
  • Compliance: RoHS requirements

Technical Specifications

Model Device Marking R1 (k) R2 (k) Shipping (7 inch/3000 unit reel) Shipping (13 inch/10,000 unit reel)
LMUN2111LT1G A6A 10 10 3000/Tape & Reel 10,000/Tape & Reel
LMUN2110LT1G A6O 47 8 3000/Tape & Reel 10,000/Tape & Reel
LMUN2112LT1G A6B 22 22 3000/Tape & Reel 10,000/Tape & Reel
LMUN2113LT1G A6C 47 47 3000/Tape & Reel 10,000/Tape & Reel
LMUN2114LT1G A6D 10 47 3000/Tape & Reel 10,000/Tape & Reel
LMUN2115LT1G A6E 10 8 3000/Tape & Reel 10,000/Tape & Reel
LMUN2116LT1G A6F 4.7 8 3000/Tape & Reel 10,000/Tape & Reel
LMUN2130LT1G A6G 1.0 1.0 3000/Tape & Reel 10,000/Tape & Reel
LMUN2131LT1G A6H 2.2 2.2 3000/Tape & Reel 10,000/Tape & Reel
LMUN2132LT1G A6J 4.7 4.7 3000/Tape & Reel 10,000/Tape & Reel
LMUN2133LT1G A6K 4.7 47 3000/Tape & Reel 10,000/Tape & Reel
LMUN2134LT1G A6L 22 47 3000/Tape & Reel 10,000/Tape & Reel
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation (TA = 25C, Note 1) PD 246 mW
Total Device Dissipation (TA = 25C, Note 2) PD 400 mW
Derate above 25C (Note 1) 1.5 mW/C
Derate above 25C (Note 2) 2.0 mW/C
Thermal Resistance Junction-to-Ambient (Note 1) RJA 508 C/W
Thermal Resistance Junction-to-Ambient (Note 2) RJA 311 C/W
Thermal Resistance Junction-to-Lead (Note 1) RJL 174 C/W
Thermal Resistance Junction-to-Lead (Note 2) RJL 208 C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 C
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO 500 nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO 0.5 (LMUN2111LT1G) mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 Vdc
Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 Vdc
DC Current Gain (V CE = 10 V, IC = 5.0 mA ) hFE 35 - 160 (varies by model)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) 0.25 Vdc
Output Voltage (on) (V CC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL 0.2 Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 Vdc
Input Resistor R1 (Typical) R1 0.7 - 61.1 (varies by model) k
Resistor Ratio R1/R2 (Typical) R1/R2 0.055 - 1.2 (varies by model)

Notes:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%


2409302331_LRC-LMUN2116LT1G_C5273251.pdf

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