PNP Silicon Transistor LRC LMUN2116LT1G with Integrated Bias Resistor Network in Compact SOT23 Package
Product Overview
The LMUN2111LT1G Series are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network (BRT). These devices are designed to replace single transistors with external resistor bias networks, simplifying circuit design, reducing board space, and lowering component count. The integrated BRT contains a single transistor with a series base resistor and a base-emitter resistor. Housed in a SOT-23 package, these transistors are suitable for low-power surface mount applications and can be soldered using wave or reflow methods. The modified gull-winged leads are designed to absorb thermal stress during soldering. Available in 8 mm embossed tape and reel packaging.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: PNP Silicon
- Package: SOT-23
- Compliance: RoHS requirements
Technical Specifications
| Model | Device Marking | R1 (k) | R2 (k) | Shipping (7 inch/3000 unit reel) | Shipping (13 inch/10,000 unit reel) |
|---|---|---|---|---|---|
| LMUN2111LT1G | A6A | 10 | 10 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2110LT1G | A6O | 47 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2112LT1G | A6B | 22 | 22 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2113LT1G | A6C | 47 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2114LT1G | A6D | 10 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2115LT1G | A6E | 10 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2116LT1G | A6F | 4.7 | 8 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2130LT1G | A6G | 1.0 | 1.0 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2131LT1G | A6H | 2.2 | 2.2 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2132LT1G | A6J | 4.7 | 4.7 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2133LT1G | A6K | 4.7 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| LMUN2134LT1G | A6L | 22 | 47 | 3000/Tape & Reel | 10,000/Tape & Reel |
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Collector Current | IC | 100 | mAdc |
| Total Device Dissipation (TA = 25C, Note 1) | PD | 246 | mW |
| Total Device Dissipation (TA = 25C, Note 2) | PD | 400 | mW |
| Derate above 25C (Note 1) | 1.5 | mW/C | |
| Derate above 25C (Note 2) | 2.0 | mW/C | |
| Thermal Resistance Junction-to-Ambient (Note 1) | RJA | 508 | C/W |
| Thermal Resistance Junction-to-Ambient (Note 2) | RJA | 311 | C/W |
| Thermal Resistance Junction-to-Lead (Note 1) | RJL | 174 | C/W |
| Thermal Resistance Junction-to-Lead (Note 2) | RJL | 208 | C/W |
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C |
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | 100 nAdc | |
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | 500 nAdc | |
| Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) | IEBO | 0.5 (LMUN2111LT1G) | mAdc |
| Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) | V(BR)CBO | 50 | Vdc |
| Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) | V(BR)CEO | 50 | Vdc |
| DC Current Gain (V CE = 10 V, IC = 5.0 mA ) | hFE | 35 - 160 (varies by model) | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | 0.25 Vdc | |
| Output Voltage (on) (V CC = 5.0 V, VB = 2.5 V, RL = 1.0 k) | VOL | 0.2 | Vdc |
| Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) | VOH | 4.9 | Vdc |
| Input Resistor R1 (Typical) | R1 | 0.7 - 61.1 (varies by model) | k |
| Resistor Ratio R1/R2 (Typical) | R1/R2 | 0.055 - 1.2 (varies by model) |
Notes:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2409302331_LRC-LMUN2116LT1G_C5273251.pdf
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