Low voltage N channel MOSFET MATSUKI ME2320D G with ESD protection and compact surface mount package
Key Attributes
Model Number:
ME2320D-G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.4A
RDS(on):
40mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
378pF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
ME2320D-G
Package:
SOT-23
Product Description
Product Overview
The ME2320D is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection.
Product Attributes
- Brand: ME (Matsuki Electric/Force mos)
- Product Series: ME2320D/ME2320D-G
- Material: N-Channel MOSFET
- Certifications: Pb-Free (ME2320D), Green product-Halogen free (ME2320D-G)
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 0.4 - 1 | V | VDS=VGS, ID=250A |
| Gate Leakage Current | IGSS | 1 | A | VDS=0V, VGS=4.5V |
| Gate Leakage Current | IGSS | 10 | A | VDS=0V, VGS=8V |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=20V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 17 - 21 | m | VGS=4.5V, ID= 6.5A |
| Drain-Source On-Resistance | RDS(ON) | 20 - 25 | m | VGS=2.5V, ID= 5.5A |
| Drain-Source On-Resistance | RDS(ON) | 30 - 40 | m | VGS=1.8V, ID= 5A |
| Diode Forward Voltage | VSD | 0.6 - 1 | V | IS=1A, VGS=0V |
| Total Gate Charge | Qg | 10 | nC | VDS=10V, VGS=4.5, ID=6.5A |
| Gate-Source Charge | Qgs | 0.9Qg | ||
| Gate-Drain Charge | Qgd | 3 | ||
| Input Capacitance | Ciss | 378 | pF | VDS=10V, VGS=0V,f=1MHz |
| Output Capacitance | Coss | 73 | ||
| Reverse Transfer Capacitance | Crss | 21 | ||
| Turn-On Delay Time | td(on) | 250 | ns | VDS=10V, RL= 1.5, VGS=5V, RGEN=3 |
| Turn-On Rise Time | tr | 420 | ||
| Turn-Off Delay Time | td(off) | 3950 | ||
| Turn-Off Fall Time | tf | 3700 | ||
| Continuous Drain Current | ID | 6.4 | A | TA=25 |
| Continuous Drain Current | ID | 5.1 | A | TA=70 |
| Pulsed Drain Current | IDM | 26 | A | |
| Maximum Power Dissipation | PD | 1.4 | W | TA=25 |
| Maximum Power Dissipation | PD | 0.9 | W | TA=70 |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 90 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper |
2410121455_MATSUKI-ME2320D-G_C3647149.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
