SOT23 Package Transistor LRC L2SC1623RLT1G Featuring 60V Collector Base Voltage and Lead Free Option
Key Attributes
Model Number:
L2SC1623RLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SC1623RLT1G
Package:
SOT-23
Product Description
L2SC1623Q/R/S Series Transistors
The L2SC1623Q/R/S series are general-purpose transistors designed for various electronic applications. They offer reliable performance with key electrical characteristics for DC and small-signal operation.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)
- Lead Free: Pb-Free package is available
Technical Specifications
| Symbol | Parameter | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| VCEO | Collector-Emitter Voltage | 50 | V | |||
| VCBO | Collector-Base Voltage | 60 | V | |||
| VEBO | Emitter-Base Voltage | 7 | V | |||
| IC | Collector Current-Continuous | 150 | mAdc | |||
| THERMAL CHARACTERISTICS | ||||||
| PD | Total Device Dissipation (FR-5 Board) | 225 | mW | (1) TA=25oC | ||
| JA | Thermal Resistance, Junction to Ambient (FR-5 Board) | 556 | C/W | (1) | ||
| PD | Total Device Dissipation (Alumina Substrate) | 300 | mW | (2) TA=25oC | ||
| JA | Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 | C/W | (2) | ||
| Tj, Tstg | Junction and Storage Temperature | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) | ||||||
| ICBO | Collector Cutoff Current | 0.1 | A | VCB=60V | ||
| IEBO | Emitter Cutoff Current | 0.1 | A | VBE=5V | ||
| hFE | DC Current Gain | 120 | 560 | IC=1.0mA, VCE=6V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | 0.15 | 0.3 | V | IC=100mA, IB=10mA | |
| VBE(sat) | Base-Emitter Saturation Voltage | 0.86 | 1.0 | V | IC=100mA, IB=10mA | |
| VBE | Base-Emitter On Voltage | 0.55 | 0.62 | 0.65 | V | IC=1mA,VCE=6.0V |
| SMALL-SIGNAL CHARACTERISTICS | ||||||
| Ft | Current-Gain-Bandwidth Product | 250 | MHz | VCE=6.0V, IE =-10mA | ||
| Cob | Output Capacitance | 3 | pF | VCE = 6V, IE=0, f=1.0MHz | ||
Device Marking and Ordering Information
| Device Marking | Model | hFE Classification | Shipping (Tape&Reel) |
|---|---|---|---|
| L5 | L2SC1623QLT1G | Q (120~270) | 3000/10000 |
| L6 | L2SC1623RLT1G | R (180~390) | 3000/10000 |
| L7 | L2SC1623SLT1G | S (270~560) | 3000/10000 |
| L5 | L2SC1623QLT3G | Q (120~270) | 3000/10000 |
| L6 | L2SC1623RLT3G | R (180~390) | 3000/10000 |
| L7 | L2SC1623SLT3G | S (270~560) | 3000/10000 |
1810010911_LRC-L2SC1623RLT1G_C136117.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
