Surface Mount PNP Silicon Transistor LRC LDTA143TET1G with Integrated Bias Resistor Network SC89 Package

Key Attributes
Model Number: LDTA143TET1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
6.1kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTA143TET1G
Package:
SC-89
Product Description

Product Overview

The LDTA114EET1G Series are PNP Silicon Surface Mount Bias Resistor Transistors (BRT) designed to integrate a single transistor with a monolithic bias network. This series simplifies circuit design, reduces board space, and lowers component count by incorporating a series base resistor and a base-emitter resistor directly into the device. Housed in the SC-89 package, these transistors are suitable for low-power surface mount applications and can be soldered using wave or reflow methods, with modified gull-winged leads designed to absorb thermal stress. They are compliant with RoHS requirements.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS
  • Package Type: SC-89
  • Transistor Type: PNP Silicon
  • Technology: Surface Mount
  • Integration: Monolithic Bias Resistor Network

Technical Specifications

Model Device Marking R1 (K) R2 (K) Package Shipping Quantity
LDTA114EET1G 6A 10 10 SC-89 3000 Tape & Reel
LDTA124EET1G 6B 22 22 SC-89 3000 Tape & Reel
LDTA144EET1G 6C 47 47 SC-89 3000 Tape & Reel
LDTA114YET1G 6D 10 47 SC-89 3000 Tape & Reel
LDTA114TET1G 6E 10 SC-89 3000 Tape & Reel
LDTA143TET1G 6F 4.7 SC-89 3000 Tape & Reel
LDTA123EET1G 6H 2.2 2.2 SC-89 3000 Tape & Reel
LDTA143EET1G 43 4.7 4.7 SC-89 3000 Tape & Reel
LDTA143ZET1G 6K 4.7 47 SC-89 3000 Tape & Reel
LDTA124XET1G 6L 22 47 SC-89 3000 Tape & Reel
LDTA123JET1G 6M 2.2 47 SC-89 3000 Tape & Reel
LDTA115EET1G 6N 100 100 SC-89 3000 Tape & Reel
LDTA144WET1G 6P 47 22 SC-89 3000 Tape & Reel
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation, FR-4 Board (@ TA = 25C) PD 200 mW
Derate above 25C 1.6 mW/C
Thermal Resistance, Junction-to-Ambient (Note 1) RJA 600 C/W
Total Device Dissipation, FR-4 Board (@ TA = 25C) (Note 2) PD 300 mW
Derate above 25C 2.4 mW/C
Thermal Resistance, Junction-to-Ambient (Note 2) RJA 400 C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 C
Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - 0.5 mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc
Characteristic Symbol Min Typ Max Unit
DC Current Gain (VCE = 5.0 V, IC = 5.0 mA) hFE 35 - - -
DC Current Gain (VCE = 5.0 V, IC = 1.0 mA) hFE - - 80 -
DC Current Gain (VCE = 5.0 V, IC = 0.2 mA) hFE - - 160 -
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) - - 0.25 Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL - - 0.2 Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 - - Vdc
Resistor Model Min Typ Max Unit
Input Resistor (R1) LDTA114EET1G 7.0 15.4 32.9 k
Resistor Ratio (R1/R2) LDTA114EET1G/LDTA124EET1G 0.8 - - -

Note 1: FR-4 @ Minimum Pad.

Note 2: FR-4 @ 1.0 x 1.0 Inch Pad.

Note 3: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

Note 4: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%


2410010101_LRC-LDTA143TET1G_C2875420.pdf

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