Low On State Resistance Power Transistor MATSUKI ME20N15 N Channel DMOS Trench Technology for Switching
Key Attributes
Model Number:
ME20N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
20.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
110mΩ@7V
Gate Threshold Voltage (Vgs(th)):
4.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
1.039nF@30V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
32.3nC@10V
Mfr. Part #:
ME20N15
Package:
TO-252-3L
Product Description
Product Overview
The ME20N15 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small outline surface mount package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME20N15), Green product-Halogen free (ME20N15-G)
Technical Specifications
| Parameter | Symbol | ME20N15 / ME20N15-G | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | 150 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC=25) | ID | 20.8 | A |
| Continuous Drain Current (TC=70) | ID | 16.6 | A |
| Pulsed Drain Current | IDM | 83 | A |
| Maximum Power Dissipation (TC=25) | PD | 62.5 | W |
| Maximum Power Dissipation (TC=70) | PD | 40 | W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Thermal Resistance-Junction to Case* | RJC | 2 | /W |
| Electrical Characteristics (TJ=25 Unless Otherwise Specified) | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 150 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 3.4 - 4.6 | V |
| Gate-Body Leakage (VDS=0V, VGS=±20V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=150V, VGS=0V) | IDSS | 1 | μA |
| Drain-Source On-Resistance* (VGS=10V, ID=10A) | RDS(ON) | 75.5 - 90 | mΩ |
| Drain-Source On-Resistance* (VGS=7V, ID=10A) | RDS(ON) | 84 - 110 | mΩ |
| Diode Forward Voltage* (IS=1A, VGS=0V) | VSD | 0.72 - 1 | V |
| Dynamic Characteristics (TJ=25 Noted) | |||
| Total Gate Charge (VDD=75V,VGS=10V, ID=10A) | Qg | 32.3 | nC |
| Gate-Source Charge | Qgs | 15.7 | nC |
| Gate-Drain Charge | Qgd | 6.62 | nC |
| Input Capacitance (VDS=30V, VGS=0V, f=1MHz) | Ciss | 1039 | pF |
| Output Capacitance (VDS=30V, VGS=0V, f=1MHz) | Coss | 136 | pF |
| Reverse Transfer Capacitance (VDS=30V, VGS=0V, f=1MHz) | Crss | 14 | pF |
| Turn-On Delay Time (VGS=10V,VDD=75V, RG=3Ω,ID=1A, RL=75Ω) | td(on) | 24.9 | ns |
| Turn-On Rise Time | tr | 6.02 | ns |
| Turn-Off Delay Time | td(off) | 49.9 | ns |
| Turn-Off Fall Time | tf | 20 | ns |
2410121657_MATSUKI-ME20N15_C2841373.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
