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quality General purpose NPN silicon transistor LRC LMBT3904TT1G offering electrical characteristics and thermal performance factory
quality General purpose NPN silicon transistor LRC LMBT3904TT1G offering electrical characteristics and thermal performance factory

General purpose NPN silicon transistor LRC LMBT3904TT1G offering electrical characteristics and thermal performance

Key Attributes
Model Number: LMBT3904TT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3904TT1G
Package:
SC-89
Product Description

Product Overview

The LMBT3904TT1G is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It offers simplified circuit design and is available in tape and reel packaging. The S- prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Certifications: RoHS compliance, AEC-Q101 Qualified (S- variants)

Technical Specifications

ModelDescriptionMaximum RatingsElectrical Characteristics (Typical unless otherwise noted)Thermal Characteristics
LMBT3904TT1GNPN Silicon TransistorV CEO : 40 Vdc
V CBO : 60 Vdc
V EBO : 6.0 Vdc
I C : 200 mAdc		V (BR)CEO : 40 Vdc
V (BR)CBO : 60 Vdc
V (BR)EBO : 6.0 Vdc
I BL : 50 nAdc
I CEX : 50 nAdc
hFE : 40-300 (V CE=1.0 Vdc)
VCE(sat) : 0.2-0.3 Vdc
V BE(sat) : 0.65-0.95 Vdc
f T : 200 MHz
C obo : 4.0 pF
C ibo : 8.0 pF
h ie : 1.0-10 pF
h re : 0.5-8.0 X10 4
h fe : 100-400
h oe : 1.0-40 mhos
NF : 5.0 dB
t d : 35 ns
t r : 35 ns
t s : 200 ns
t f : 50 ns		PD : 200 mW (FR-4 Board, TA = 25C)
RJA : 600 C/W (FR-4 Board)
TJ , Tstg : 55 to +150 C
S-LMBT3904TT1GAEC-Q101 Qualified NPN Silicon TransistorV CEO : 40 Vdc
V CBO : 60 Vdc
V EBO : 6.0 Vdc
I C : 200 mAdc		V (BR)CEO : 40 Vdc
V (BR)CBO : 60 Vdc
V (BR)EBO : 6.0 Vdc
I BL : 50 nAdc
I CEX : 50 nAdc
hFE : 40-300 (V CE=1.0 Vdc)
VCE(sat) : 0.2-0.3 Vdc
V BE(sat) : 0.65-0.95 Vdc
f T : 200 MHz
C obo : 4.0 pF
C ibo : 8.0 pF
h ie : 1.0-10 pF
h re : 0.5-8.0 X10 4
h fe : 100-400
h oe : 1.0-40 mhos
NF : 5.0 dB
t d : 35 ns
t r : 35 ns
t s : 200 ns
t f : 50 ns		PD : 200 mW (FR-4 Board, TA = 25C)
RJA : 600 C/W (FR-4 Board)
TJ , Tstg : 55 to +150 C
LMBT3904TT3GNPN Silicon TransistorV CEO : 40 Vdc
V CBO : 60 Vdc
V EBO : 6.0 Vdc
I C : 200 mAdc		V (BR)CEO : 40 Vdc
V (BR)CBO : 60 Vdc
V (BR)EBO : 6.0 Vdc
I BL : 50 nAdc
I CEX : 50 nAdc
hFE : 40-300 (V CE=1.0 Vdc)
VCE(sat) : 0.2-0.3 Vdc
V BE(sat) : 0.65-0.95 Vdc
f T : 200 MHz
C obo : 4.0 pF
C ibo : 8.0 pF
h ie : 1.0-10 pF
h re : 0.5-8.0 X10 4
h fe : 100-400
h oe : 1.0-40 mhos
NF : 5.0 dB
t d : 35 ns
t r : 35 ns
t s : 200 ns
t f : 50 ns		PD : 200 mW (FR-4 Board, TA = 25C)
RJA : 600 C/W (FR-4 Board)
TJ , Tstg : 55 to +150 C
S-LMBT3904TT3GAEC-Q101 Qualified NPN Silicon TransistorV CEO : 40 Vdc
V CBO : 60 Vdc
V EBO : 6.0 Vdc
I C : 200 mAdc		V (BR)CEO : 40 Vdc
V (BR)CBO : 60 Vdc
V (BR)EBO : 6.0 Vdc
I BL : 50 nAdc
I CEX : 50 nAdc
hFE : 40-300 (V CE=1.0 Vdc)
VCE(sat) : 0.2-0.3 Vdc
V BE(sat) : 0.65-0.95 Vdc
f T : 200 MHz
C obo : 4.0 pF
C ibo : 8.0 pF
h ie : 1.0-10 pF
h re : 0.5-8.0 X10 4
h fe : 100-400
h oe : 1.0-40 mhos
NF : 5.0 dB
t d : 35 ns
t r : 35 ns
t s : 200 ns
t f : 50 ns		PD : 200 mW (FR-4 Board, TA = 25C)
RJA : 600 C/W (FR-4 Board)
TJ , Tstg : 55 to +150 C

2208111800_LRC-LMBT3904TT1G_C123310.pdf

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