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quality N Channel Small Signal MOSFET LRC L2N7002DW1T1G with 1000V ESD Protection and AEC Q101 Qualification factory
quality N Channel Small Signal MOSFET LRC L2N7002DW1T1G with 1000V ESD Protection and AEC Q101 Qualification factory

N Channel Small Signal MOSFET LRC L2N7002DW1T1G with 1000V ESD Protection and AEC Q101 Qualification

Key Attributes
Model Number: L2N7002DW1T1G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
2 N-Channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
380mW
Gate Charge(Qg):
-
Mfr. Part #:
L2N7002DW1T1G
Package:
SC-88
Product Description

Product Overview

The L2N7002DW1T1G and S-L2N7002DW1T1G are N-Channel Small Signal MOSFETs designed for automotive and general applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, featuring RoHS compliance and Halogen-Free materials. They offer ESD protection up to 1000V, making them suitable for sensitive electronic circuits.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Qualification: AEC-Q101 qualified and PPAP capable (S- prefix models)
  • ESD Protection: 1000V
  • Package: SC-88 (SOT-363)

Technical Specifications

Parameter Symbol L2N7002DW1T1G S-L2N7002DW1T1G Unit Notes
DEVICE MARKING AND ORDERING INFORMATION
Device Marking 702 S-L2N7002DW1T1G
Shipping 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS (Ta = 25C)
DrainSource Voltage VDSS 60 V
DrainGate Voltage (RGS = 1.0 m) VDGR 60 V
GateSource Voltage Continuous VGS 20 V
GateSource Voltage Non-repetitive (tp50s) VGSM 40 V
Drain Current Continuous ID 115 mAmps
Drain Current Pulsed (Note 1) IDM 500 mA
Total Device Dissipation, Per Device FR5 Board (Note 2) @ TA = 25C PD 250 mW
Derate above 25C 3.0 mW/C
Thermal Resistance, JunctiontoAmbient (Note 2) RJA 328 C/W
Junction and Storage temperature TJ,Tstg 55+150 C
ELECTRICAL CHARACTERISTICS (Ta= 25C)
DrainSource Breakdown Voltage (VGS = 0, ID = 10A) VBRDSS 60 V Min.
Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 V) TJ = 25C IDSS 0.01 A Max.
Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 V) TJ = 125C IDSS 1.0 A Max.
GateBody Leakage Current, Forward (VGS = 20 V) IGSSF 1.0 A Max.
GateBody Leakage Current, Reverse (VGS = - 20 V) IGSSR 1.0 A Max.
Gate Threshold Voltage (VDS = VGS, ID = 250A) VGS(th) 1.0 V Typ.
OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 V) ID(on) 500 mA Min.
Static DrainSource OnState Voltage (VGS = 10 V, ID = 500 mA) VDS(on) 0.375 V Max.
Static DrainSource OnState Voltage (VGS = 5.0 V, ID = 50 mA) VDS(on) 1.5 V Max.
Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) TC = 25C RDS(on) 7.5 Ohms Max.
Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) TC = 125C RDS(on) 13.5 Ohms Max.
Static DrainSource OnState Resistance (VGS = 5.0 V, ID = 50 mA) TC = 25C RDS(on) 13.5 Ohms Max.
Static DrainSource OnState Resistance (VGS = 5.0 V, ID = 50 mA) TC = 125C RDS(on) 20 Ohms Max.
Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mA) gfs 80 mmhos Typ.
Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Cibo 50 pF Typ.
Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Cobo 40 pF Typ.
Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Crss 20 pF Typ.
TurnOn Delay Time td(on) 3.0 ns Max. (VDD = 25 V , ID =500 mA, RG = 25,RL = 50 ,Vgen = 10 V)
TurnOff Delay Time td(off) 3.75 ns Max. (VDD = 25 V , ID =500 mA, RG = 25,RL = 50 ,Vgen = 10 V)
Diode Forward OnVoltage (IS = 115 mA, VGS = 0 V) VSD 1.5 V Max.
Source Current Continuous (Body Diode) IS 115 mA
Source Current Pulsed (Body Diode) ISM 800 mA
DIMENSIONS
Dimension D 1.80 - 2.20 mm
Dimension E1 2.00 - 2.20 mm
Dimension L 0.90 - 1.00 mm
Dimension A 0.70 - 1.10 mm
Dimension A1 0 - 0.10 mm
Dimension b 0.15 - 0.25 mm
Dimension c 0.08 - 0.10 mm
Pitch e 0.65 BSC mm

Notes:

  • 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
  • 2. FR5 = 1.00.750.062 in.
  • 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

1912111437_LRC-L2N7002DW1T1G_C383161.pdf

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