Low Resistance N Channel MOSFET MATSUKI ME80N75F Suitable for Load Switch and Power Management Tasks
Key Attributes
Model Number:
ME80N75F
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
55.7A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
8mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
146pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
6.16nF@20V
Pd - Power Dissipation:
43.4W
Gate Charge(Qg):
27.9nC@4.5V
Mfr. Part #:
ME80N75F
Package:
TO-220
Product Description
Product Overview
The ME80N75F is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design significantly minimizes on-state resistance, offering exceptionally low RDS(ON) and maximum DC current capability. It is ideal for power management, DC/DC converters, and load switch applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME80N75F), Green product-Halogen free (ME80N75F-G)
Technical Specifications
| Parameter | Symbol | Maximum Ratings Unit | Value |
| Drain-Source Voltage | VDS | V | 75 |
| Gate-Source Voltage | VGS | V | 25 |
| Continuous Drain Current (TC=25) | ID | A | 55.7 |
| Continuous Drain Current (TC=70) | ID | A | 46.6 |
| Pulsed Drain Current | IDM | A | 223 |
| Single pulse Avalanche Current (L=0.3mH, TC=25) | Ias | A | 40 |
| Single pulse Avalanche Current (L=0.3mH, TC=70) | Ias | A | 33.5 |
| Single pulse Avalanche Energy (L=0.3mH, TC=25) | Eas | MJ | 240 |
| Single pulse Avalanche Energy (L=0.3mH, TC=70) | Eas | MJ | 168 |
| Maximum Power Dissipation (TC=25) | PD | W | 61.9 |
| Maximum Power Dissipation (TC=70) | PD | W | 43.4 |
| Junction and Storage Temperature Range | TJ | -55 to 175 | |
| Thermal Resistance-Junction to Case* | RJC | /W | 2.42 |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | V | 75 |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | V | 2.0 - 4.0 |
| Gate-Body Leakage (VDS=0V, VGS=25V) | IGSS | nA | 100 |
| Zero Gate Voltage Drain Current (VDS=75V, VGS=0V) | IDSS | A | 1 |
| Drain-Source On-Resistance* (VGS=10V, ID=40A) | RDS(ON) | m | 8 - 10 |
| Diode Forward Voltage* (IS=40A, VGS=0V) | VSD | V | 0.9 - 1.2 |
| Total Gate Charge (VDD=60V, VGS=10V, ID=75A) | Qg | nC | 137 |
| Total Gate Charge (VDD=60V, VGS=4.5V, ID=75A) | Qg | nC | 27.9 |
| Gate-Source Charge | Qgs | nC | 36.2 |
| Gate-Drain Charge | Qgd | nC | 52.1 |
| Gate Resistance (VDS=0V, VGS=0V, f=1MHz) | Rg | 1 | |
| Input Capacitance (VDS=20V, VGS=0V, f=1MHz) | Ciss | pF | 6160 |
| Output Capacitance | Coss | pF | 435 |
| Reverse Transfer Capacitance | Crss | pF | 146 |
| Turn-On Delay Time (VGS =10V, RL=15, VDD=30V, RG=10) | td(on) | ns | 63.6 |
| Turn-On Rise Time | tr | ns | 40.8 |
| Turn-Off Delay Time | td(off) | ns | 167 |
| Turn-Off Fall Time | tf | ns | 47.7 |
2410121657_MATSUKI-ME80N75F_C709756.pdf
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