LRC S-LP7413DT3WG 40V P-Channel MOSFET Featuring Low RDS on and Suitable for Automotive Applications
Key Attributes
Model Number:
S-LP7413DT3WG
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
47A
RDS(on):
12mΩ@10V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
244pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.974nF@20V
Pd - Power Dissipation:
41W
Gate Charge(Qg):
50nC@15V
Mfr. Part #:
S-LP7413DT3WG
Package:
DFN5060-8B
Product Description
Product Overview
The S-LP7413DT3WG is a 40V P-Channel (D-S) MOSFET from Leshan Radio Company, LTD. It features low RDS(on) trench technology, low thermal impedance, and fast switching speed, making it suitable for load switches, DC/DC conversion, and motor drives. This device complies with RoHS requirements and is Halogen Free. The S- prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements, Halogen Free
- Qualification: AEC-Q101 (for S- prefix)
- PPAP Capable: Yes (for S- prefix)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Device Marking and Ordering Information | ||||||
| Device Marking | S-LP7413DT3WG | |||||
| Shipping | 5000/Tape&Reel | |||||
| Model | S-LP7413DT3WG | 40V P-Channel (D-S) MOSFET | ||||
| Package | DFN5060-8B | |||||
| Maximum Ratings (Ta = 25C) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | |||
| Power Dissipation (Note 1) | PD | 56 | mW | TA = 25 | ||
| Continuous Drain Current (Note 1) | ID | 2.5 | A | TC = 25 | ||
| Pulsed Drain Current (Note 2) | IDM | 41 | A | TC = 25 | ||
| Avalanche Current (L=0.1mH) | IAS | 14 | A | TA = 25 | ||
| Avalanche energy (L=0.1mH) | EAS | 12 | mJ | TA = 70 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient (Note 1) | RJA | 50 | /W | |||
| Thermal Resistance, Junction-to-Case | RJC | -47 | -38 | /W | TC = 25 / TC = 70 | |
| Electrical Characteristics (Ta= 25C) | ||||||
| DrainSource Breakdown Voltage | VBRDSS | -40 | V | (VGS = 0 V, ID = -250 A) | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | (VDS = VGS , ID = -250 A) | |
| Gate Leakage Current | IGSS | ±100 | nA | (VDS = 0 V, VGS = ±20 V) | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | (VDS = -32 V, VGS = 0 V) | ||
| Drain-Source On-Resistance | RDS(ON) | 10 | 12 | m | (VGS = -10 V, ID = -8 A) | |
| Drain-Source On-Resistance | RDS(ON) | 10 | 18 | m | (VGS = -4.5 V, ID = -8 A) | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | (IS = -1 A, VGS = 0 V) | |
| Total Gate Charge | Qg | 12 | nC | (VDS= -15 V, VGS = -5 V, ID= -1 A) | ||
| Gate-Source Charge | Qgs | 50 | nC | |||
| Gate-Drain Charge | Qgd | 10 | nC | |||
| Turn-On Delay Time | td(on) | 40 | ns | |||
| Rise Time | tr | 100 | ns | |||
| Turn-Off Delay Time | td(off) | 292 | ns | |||
| Fall Time | tf | 244 | ns | |||
| Input Capacitance | Ciss | 3974 | pF | (VDS = -20 V, VGS = 0 V, f = 1 MHz) | ||
| Output Capacitance | Coss | pF | (VDS = -20 V, VGS = 0 V, f = 1 MHz) | |||
| Reverse Transfer Capacitance | Crss | pF | (VDS = -20 V, VGS = 0 V, f = 1 MHz) | |||
| Dimensions (DFN5060-8B) | ||||||
| Dimension | Symbol | MIN | NOM | MAX | Unit | |
| A | 0.90 | 1.00 | 1.10 | mm | ||
| A1 | 0.00 | 0.02 | 0.05 | mm | ||
| E | 6.00 | 6.15 | 6.30 | mm | ||
| E1 | 5.66 | 5.76 | 5.86 | mm | ||
| E2 | 3.40 | 3.50 | 3.60 | mm | ||
| D | 4.95 | 5.10 | 5.25 | mm | ||
| D1 | 4.80 | 4.90 | 5.00 | mm | ||
| D2 | 3.76 | 3.86 | 3.96 | mm | ||
| b | 0.30 | 0.35 | 0.40 | mm | ||
| B | 0.36 | 0.41 | 0.46 | mm | ||
| L | 0.56 | 0.66 | 0.76 | mm | ||
| e | 1.27BSC | |||||
| c | 0.254REF | |||||
2303301000_LRC-S-LP7413DT3WG_C5383069.pdf
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