High cell density DMOS trench transistor MATSUKI ME4920 for low voltage battery powered applications
Key Attributes
Model Number:
ME4920
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
2 N-Channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
350pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
11.5nC@10V
Mfr. Part #:
ME4920
Package:
SOP-8
Product Description
Product Overview
The ME4920 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its design ensures low in-line power loss within a very small outline surface mount package.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Variants: ME4920 (Pb-free), ME4920-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
Technical Specifications
| Parameter | Symbol | ME4920/ME4920-G (Typ) | Unit | Conditions |
| Drain-Source Voltage | VDS | 30 | V | VGS=0V, ID=250A |
| Gate-Source Voltage | VGS | ±20 | V | |
| Gate Threshold Voltage | VGS(th) | 1.0 - 3.0 | V | VDS=VGS, ID=250A |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 26 - 35 | mΩ | VGS=10V, ID=6.9A |
| Drain-Source On-Resistance | RDS(ON) | 36 - 45 | mΩ | VGS=4.5V, ID=5.8A |
| Diode Forward Voltage | VSD | 0.75 - 1.2 | V | IS=1.7A, VGS=0V |
| Total Gate Charge | Qg | 11.5 | nC | VDS=15V, VGS=10V, ID=6.9A |
| Gate-Source Charge | Qgs | 2.7 | nC | |
| Gate-Drain Charge | Qgd | 2.3 | nC | |
| Input Capacitance | Ciss | 350 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 65 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 16 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 9 | ns | VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω |
| Turn-On Rise Time | tr | 10 | ns | VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω |
| Turn-Off Delay Time | td(off) | 32 | ns | VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω |
| Turn-Off Fall Time | tf | 3.5 | ns | VDD=15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω |
| Continuous Drain Current | ID | 6 | A | TA=25 |
| Continuous Drain Current | ID | 4.8 | A | TA=70 |
| Pulsed Drain Current | IDM | 24 | A | |
| Maximum Power Dissipation | PD | 2 | W | TA=25 |
| Maximum Power Dissipation | PD | 1.3 | W | TA=70 |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RΘJA | 62.5 | /W | * |
2410121449_MATSUKI-ME4920_C3647154.pdf
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