Low On State Resistance MOSFET LRC LDN3408ET1G 30V N Channel Enhancement Mode Device for Electronics
Product Overview
The LDN3408ET1G and S-LDN3408ET1G are 30V N-Channel Enhancement Mode MOSFETs designed for various applications. These devices offer excellent ESD protection (2KV HBM) and low on-state resistance (RDS(ON)) across different gate-source voltages and drain currents. They are RoHS compliant and Halogen Free. The S-prefix variant is specifically designed for automotive and other applications requiring unique site and control change requirements, and is AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix variant)
- PPAP Capable: Yes (S-prefix variant)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | 30 | V | |
| GateSource Voltage | VGS | - | - | 12 | V | |
| Drain Current-Continuous (Ta=25) | ID | - | - | 2 | A | |
| Drain Current-Pulsed | IDM | - | - | 8 | A | |
| Power Dissipation (Ta=25) | PD | - | - | 1.25 | W | Derate above 25 |
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | - | 150 | ||
| Typical Thermal resistance-Junction to Ambient | RJA | - | 100 | - | /W | |
| Electrical Characteristics (Ta= 25C) | ||||||
| Drain-Source Breakdown Voltage (VGS =0V ID =250A) | BVDSS | 30 | - | - | V | |
| Gate Threshold Voltage (VDS =VGS ,ID =250A) | VGS(th) | 0.6 | - | 1.4 | V | |
| Drain-Source On-State Resistance (VGS =10V, ID =3A) | RDS(ON) | - | - | 75 | m | |
| Drain-Source On-State Resistance (VGS =4.5V, ID =2A) | RDS(ON) | - | - | 90 | m | |
| Drain-Source On-State Resistance (VGS =2.5V, ID =1A) | RDS(ON) | - | - | 150 | m | |
| Zero Gate Voltage Drain Current (VDS =30V,VGS =0V) | IDSS | - | - | 1 | A | |
| Gate-Body Leakage Current (VGS =12V,VDS =0V) | IGSS | - | - | 10 | A | |
| Total Gate Charge | Qg | - | - | 677 | nC | (VDS =15V, ID =2.1A,VGS =4.5V) |
| Gate-Source Charge | Qgs | - | - | 247 | nC | (VDS =15V, VGS =0V,f=1.0MHZ) |
| Gate-Drain Charge | Qgd | - | - | 33 | nC | (VDD =15V, ID =1A,VGS =4.5V,RG=6) |
| Input Capacitance | Ciss | - | - | 150 | pF | |
| Output Capacitance | Coss | - | - | 110 | pF | |
| Reverse Transfer Capacitance | Crss | - | - | 5 | pF | |
| Turn-on Delay Time | td(on) | - | - | 1.8 | nS | |
| Turn-on Rise Time | tr | - | - | 5 | nS | |
| Turn-Off Delay Time | td(off) | - | - | 1.9 | nS | |
| Turn-Off Fall Time | tf | - | - | 1.4 | nS | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | - | - | 1.2 | V | (VGS =0V,IS =1.0A) |
| Diode Forward Current | IS | - | - | - | A | |
| Device Marking and Ordering Information | ||||||
| Model | Marking | Shipping | Package | |||
| LDN3408ET1G | N8 | 3000/Tape&Reel | SOT26(TSOP-6) | |||
| S-LDN3408ET1G | N8 | 10000/Tape&Reel | SOT26(TSOP-6) | |||
| LDN3408ET3G | N8 | 10000/Tape&Reel | SOT26(TSOP-6) | |||
| Outline and Dimensions (SOT26) | ||||||
| Dimension | MIN | NOM | MAX | Unit | ||
| A | 0.90 | 1.00 | 1.10 | mm | ||
| A1 | 0.01 | 0.06 | 0.10 | mm | ||
| b | 0.30 | 0.40 | 0.50 | mm | ||
| c | 0.10 | 0.17 | 0.20 | mm | ||
| D | 2.80 | 2.90 | 3.00 | mm | ||
| E | 1.50 | 1.60 | 1.70 | mm | ||
| e | 0.85 | 0.95 | 1.05 | mm | ||
| e1 | 1.80 | 1.90 | 2.00 | mm | ||
| HE | 2.60 | 2.80 | - | mm | ||
| L | 0.20 | 0.40 | 0.60 | mm | ||
| L1 | - | 0.60REF | - | mm | ||
| X | 0.70 | - | - | mm | ||
| Y | 0.90 | - | - | mm | ||
| 0 | - | 10 | ||||
2302022030_LRC-LDN3408ET1G_C559069.pdf
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