Low On State Resistance MOSFET LRC LDN3408ET1G 30V N Channel Enhancement Mode Device for Electronics

Key Attributes
Model Number: LDN3408ET1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V;70mΩ@4.5V;110mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
2 N-Channel
Output Capacitance(Coss):
33pF
Input Capacitance(Ciss):
247pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
4.7nC@4.5V
Mfr. Part #:
LDN3408ET1G
Package:
SOT-23-6
Product Description

Product Overview

The LDN3408ET1G and S-LDN3408ET1G are 30V N-Channel Enhancement Mode MOSFETs designed for various applications. These devices offer excellent ESD protection (2KV HBM) and low on-state resistance (RDS(ON)) across different gate-source voltages and drain currents. They are RoHS compliant and Halogen Free. The S-prefix variant is specifically designed for automotive and other applications requiring unique site and control change requirements, and is AEC-Q101 qualified and PPAP capable.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix variant)
  • PPAP Capable: Yes (S-prefix variant)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings
Drain-Source Voltage VDS - - 30 V
GateSource Voltage VGS - - 12 V
Drain Current-Continuous (Ta=25) ID - - 2 A
Drain Current-Pulsed IDM - - 8 A
Power Dissipation (Ta=25) PD - - 1.25 W Derate above 25
Operating Junction and Storage Temperature Range TJ ,TSTG -55 - 150
Typical Thermal resistance-Junction to Ambient RJA - 100 - /W
Electrical Characteristics (Ta= 25C)
Drain-Source Breakdown Voltage (VGS =0V ID =250A) BVDSS 30 - - V
Gate Threshold Voltage (VDS =VGS ,ID =250A) VGS(th) 0.6 - 1.4 V
Drain-Source On-State Resistance (VGS =10V, ID =3A) RDS(ON) - - 75 m
Drain-Source On-State Resistance (VGS =4.5V, ID =2A) RDS(ON) - - 90 m
Drain-Source On-State Resistance (VGS =2.5V, ID =1A) RDS(ON) - - 150 m
Zero Gate Voltage Drain Current (VDS =30V,VGS =0V) IDSS - - 1 A
Gate-Body Leakage Current (VGS =12V,VDS =0V) IGSS - - 10 A
Total Gate Charge Qg - - 677 nC (VDS =15V, ID =2.1A,VGS =4.5V)
Gate-Source Charge Qgs - - 247 nC (VDS =15V, VGS =0V,f=1.0MHZ)
Gate-Drain Charge Qgd - - 33 nC (VDD =15V, ID =1A,VGS =4.5V,RG=6)
Input Capacitance Ciss - - 150 pF
Output Capacitance Coss - - 110 pF
Reverse Transfer Capacitance Crss - - 5 pF
Turn-on Delay Time td(on) - - 1.8 nS
Turn-on Rise Time tr - - 5 nS
Turn-Off Delay Time td(off) - - 1.9 nS
Turn-Off Fall Time tf - - 1.4 nS
Drain-Source Diode Characteristics
Diode Forward Voltage VSD - - 1.2 V (VGS =0V,IS =1.0A)
Diode Forward Current IS - - - A
Device Marking and Ordering Information
Model Marking Shipping Package
LDN3408ET1G N8 3000/Tape&Reel SOT26(TSOP-6)
S-LDN3408ET1G N8 10000/Tape&Reel SOT26(TSOP-6)
LDN3408ET3G N8 10000/Tape&Reel SOT26(TSOP-6)
Outline and Dimensions (SOT26)
Dimension MIN NOM MAX Unit
A 0.90 1.00 1.10 mm
A1 0.01 0.06 0.10 mm
b 0.30 0.40 0.50 mm
c 0.10 0.17 0.20 mm
D 2.80 2.90 3.00 mm
E 1.50 1.60 1.70 mm
e 0.85 0.95 1.05 mm
e1 1.80 1.90 2.00 mm
HE 2.60 2.80 - mm
L 0.20 0.40 0.60 mm
L1 - 0.60REF - mm
X 0.70 - - mm
Y 0.90 - - mm
0 - 10

2302022030_LRC-LDN3408ET1G_C559069.pdf

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