Power management MOSFET LRC LP0404N3T5G 20V P Channel with RoHS compliance and halogen free material
Key Attributes
Model Number:
LP0404N3T5G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-
RDS(on):
2.2Ω@1.5V,100mA
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 P-Channel
Output Capacitance(Coss):
18.5pF
Input Capacitance(Ciss):
152pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
2.8nC@4.5V
Mfr. Part #:
LP0404N3T5G
Package:
SOT-883-3
Product Description
Product Overview
The LP0404N3T5G is a 20V, P-Channel (D-S) MOSFET designed for efficient power management in portable electronics. It features a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This device is RoHS compliant and Halogen Free. The S- prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Qualification (S- prefix): AEC-Q101 qualified and PPAP capable
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | -20 | V | (VGS = 0V, ID =-250uA) | ||
| VGS(th) | Gate Threshold Voltage | -0.4 | -0.5 | -1.2 | V | (VDS =VGS , ID =-250A ) |
| IGSS | Gate Leakage Current | 10 | A | (VDS =0V, VGS =4.5V ) | ||
| IDSS | Zero Gate Voltage Drain Current | -1 | A | (VDS =-16V, VGS =0V ) | ||
| RDS(ON) | Drain-Source On-Resistance | 0.48 | (VGS=-4.5V,ID=-780mA) | |||
| RDS(ON) | Drain-Source On-Resistance | 0.67 | (VGS=-2.5V,ID=-660mA) | |||
| RDS(ON) | Drain-Source On-Resistance | 0.95 | (VGS=-1.8V,ID=-100mA) | |||
| RDS(ON) | Drain-Source On-Resistance | 2.2 | (VGS=-1.5V,ID=-100mA) | |||
| VSD | Diode Forward Voltage | -1.2 | V | (IS =-350mA, VGS =0V ) | ||
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | 24.2 | nC | (VDS =-16V, VGS =-4.5V, ID =-200mA) | ||
| Qgs | Gate-Source Charge | 2.8 | nC | (Note 2) | ||
| Qgd | Gate-Drain Charge | 51.3 | nC | (Note 2) | ||
| td(on) | Turn-On Delay Time | 81.2 | ns | (VDD =-10V, RL =50,VGEN =- 5V,RG =10,ID =-200mA) (Note 2) | ||
| tr | Rise Time | 246 | ns | (Note 2) | ||
| td(off) | Turn-Off Delay Time | - | ns | (Note 2) | ||
| tf | Fall Time | - | ns | (Note 2) | ||
| Capacitance | ||||||
| Ciss | Input Capacitance | 152 | pF | (VDS = -16 V, VGS = 0 V, f = 1 MHz) | ||
| Coss | Output Capacitance | 18.5 | pF | (VDS = -16 V, VGS = 0 V, f = 1 MHz) | ||
| Crss | Reverse Transfer Capacitance | 6 | pF | (VDS = -16 V, VGS = 0 V, f = 1 MHz) | ||
| Maximum Ratings | ||||||
| VDSS | DraintoSource Voltage | -20 | V | |||
| VGS | GatetoSource Voltage | -6 | +6 | V | ||
| ID | Drain Current (Steady State) | -1.4 | A | (Note 1: Surface Mounted on 1 x 1 FR4 Board) | ||
Applications
- Power Management in Notebooks
- Portable Equipment
- Battery Powered Systems
Device Marking and Ordering Information
| Device | Marking | Shipping |
|---|---|---|
| LP0404N3T5G | T5 | 10000/Tape&Reel |
Outline and Dimensions
| DIM | MIN | TYP | MAX | Unit |
|---|---|---|---|---|
| A | 0.44 | 0.49 | 0.54 | mm |
| A1 | 0 | 0.05 | 0.10 | mm |
| b | 0.15 | 0.20 | 0.25 | mm |
| b1 | 0.15 | 0.20 | 0.25 | mm |
| c | 0.08 | 0.12 | 0.16 | mm |
| D | 0.95 | 1.00 | 1.05 | mm |
| e | 0.24 | - | - | mm |
| e1 | 0.50 | - | - | mm |
| L | 0.55 | 0.60 | 0.65 | mm |
| L1 | 0.20 | - | - | mm |
| X1 | 0.40 | - | - | mm |
| X2 | 0.40 | - | - | mm |
| Y1 | 0.22 | 0.27 | 0.32 | mm |
| Y2 | 0.29 | 0.34 | 0.39 | mm |
solder Footprint
| 0.55 | 0.20 | 0.40 | 0.40 | 1.10 | 0.70 | (mm) | |
|---|---|---|---|---|---|---|---|
| 0.32 | 0.53 | 0.22 | 0.29 | 0.27 | SOT883 |
2410010331_LRC-LP0404N3T5G_C172433.pdf
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