Low Voltage N Channel MOSFET MATSUKI ME7804S G with Compact Surface Mount Package and ESD Protection
Product Overview
The ME7804S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features ESD protection.
Product Attributes
- Brand: ME (Matsuki Electric/Force Mos)
- Origin: China (DCC )
- Product Type: N-Channel 30V (D-S) MOSFET, ESD Protected
- Color: Green (Green product-Halogen free)
- Package: DFN 3.3x3.3
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | 30 | V | |||
| VGS | ±20 | V | ||||
| ID | TA=25 | 12.2 | A | |||
| ID | TA=70 | 9.7 | A | |||
| PD | TA=25 | 3.8 | W | |||
| Electrical Characteristics | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 1 | 3 | V | ||
| IGSS | VDS=0V, VGS=±16V | ±10 | µA | |||
| IDSS | VDS=30V, VGS=0V | 1 | µA | |||
| RDS(ON) | VGS=10V, ID=10A | 13 | 16 | mΩ | ||
| RDS(ON) | VGS=4.5V, ID=5A | 19 | 25 | mΩ | ||
| Dynamic Characteristics | Qg | VDS=15V, VGS=10V, ID=10A | 18 | nC | ||
| Ciss | VDS=15V, VGS=0V,f=1MHz | 729 | pF | |||
| Coss | VDS=15V, VGS=0V,f=1MHz | 94 | pF | |||
| Crss | VDS=15V, VGS=0V,f=1MHz | 29 | pF | |||
| Switching Characteristics | td(on) | VDS=25V, RL =25Ω, RGEN=6Ω, VGS=10V | 14 | ns | ||
| tr | VDS=25V, RL =25Ω, RGEN=6Ω, VGS=10V | 9.5 | ns | |||
| td(off) | VDS=25V, RL =25Ω, RGEN=6Ω, VGS=10V | 44 | ns | |||
| tf | VDS=25V, RL =25Ω, RGEN=6Ω, VGS=10V | 5.7 | ns |
2410121449_MATSUKI-ME7804S-G_C709766.pdf
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