MATSUKI ME4454 G N Channel DMOS Trench Power Transistor Suitable for Low Voltage High Side Switching

Key Attributes
Model Number: ME4454-G
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
11mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
93pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.259nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
ME4454-G
Package:
SOP-8
Product Description

Product Overview

The ME4454 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package.

Product Attributes

  • Brand: Matsuki (implied by datasheet revision notes)
  • Product Series: ME4454/ME4454-G
  • Certifications: Pb-free (ME4454), Green product- Halogen free (ME4454-G)

Technical Specifications

ParameterSymbolLimitUnitNotes
Absolute Maximum RatingsVDSS40VDrain-Source Voltage
VGSS±20VGate-Source Voltage
ID (TA=25)10.6AContinuous Drain Current (TJ =150)*
ID (TA=70)8.5AContinuous Drain Current (TJ =150)*
IDM43APulsed Drain Current
PD (TA=25)2.5WMaximum Power Dissipation*
Operating ConditionsPD (TA=70)1.6WMaximum Power Dissipation*
TJ-55 to 150Operating Junction Temperature
Thermal ResistanceRJA50/WJunction to Ambient*
BVDSS40VDrain-Source Breakdown Voltage (VGS=0V, ID=250A)
VGS(th)1 - 3VGate Threshold Voltage (VDS=VGS, ID=250A)
Electrical Characteristics (TA =25 Unless Otherwise Specified)IGSS±100nAGate Leakage Current (VDS=0V, VGS=±20V)
IDSS1μAZero Gate Voltage Drain Current (VDS=40V, VGS=0V)
RDS(ON) (VGS=10V, ID=10A)11 - 13Drain-Source On-State Resistance a
RDS(ON) (VGS=4.5V, ID=5A)14 - 18Drain-Source On-State Resistance a
Diode CharacteristicsVSD0.7 - 1.2VDiode Forward Voltage (IS=2.3A, VGS=0V)
Qg (VGS=10V, ID=10A)28nCTotal Gate Charge (VDS=20V)
Dynamic CharacteristicsQg (VGS=4.5V, ID=10A)14nCTotal Gate Charge (VDS=20V)
Qgs5.8nCGate-Source Charge
Qgd6.5nCGate-Drain Charge
Ciss1259pFInput Capacitance (VDS=15V, VGS=0V, f=1.0MHz)
CapacitanceCoss139pFOutput Capacitance
Crss93pFReverse Transfer Capacitance
td(on)18nsTurn-On Delay Time (VDs=20V, RL =20Ω, VGs=10V, RG=3.3Ω, ID=1A)
tr11nsTurn-On Rise Time
Switching Timetd(off)50nsTurn-Off Delay Time
tf6nsTurn-Off Fall Time

2007241237_MATSUKI-ME4454-G_C709759.pdf

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