MATSUKI ME4454 G N Channel DMOS Trench Power Transistor Suitable for Low Voltage High Side Switching
Product Overview
The ME4454 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package.
Product Attributes
- Brand: Matsuki (implied by datasheet revision notes)
- Product Series: ME4454/ME4454-G
- Certifications: Pb-free (ME4454), Green product- Halogen free (ME4454-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings | VDSS | 40 | V | Drain-Source Voltage |
| VGSS | ±20 | V | Gate-Source Voltage | |
| ID (TA=25) | 10.6 | A | Continuous Drain Current (TJ =150)* | |
| ID (TA=70) | 8.5 | A | Continuous Drain Current (TJ =150)* | |
| IDM | 43 | A | Pulsed Drain Current | |
| PD (TA=25) | 2.5 | W | Maximum Power Dissipation* | |
| Operating Conditions | PD (TA=70) | 1.6 | W | Maximum Power Dissipation* |
| TJ | -55 to 150 | Operating Junction Temperature | ||
| Thermal Resistance | RJA | 50 | /W | Junction to Ambient* |
| BVDSS | 40 | V | Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | |
| VGS(th) | 1 - 3 | V | Gate Threshold Voltage (VDS=VGS, ID=250A) | |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | IGSS | ±100 | nA | Gate Leakage Current (VDS=0V, VGS=±20V) |
| IDSS | 1 | μA | Zero Gate Voltage Drain Current (VDS=40V, VGS=0V) | |
| RDS(ON) (VGS=10V, ID=10A) | 11 - 13 | mΩ | Drain-Source On-State Resistance a | |
| RDS(ON) (VGS=4.5V, ID=5A) | 14 - 18 | mΩ | Drain-Source On-State Resistance a | |
| Diode Characteristics | VSD | 0.7 - 1.2 | V | Diode Forward Voltage (IS=2.3A, VGS=0V) |
| Qg (VGS=10V, ID=10A) | 28 | nC | Total Gate Charge (VDS=20V) | |
| Dynamic Characteristics | Qg (VGS=4.5V, ID=10A) | 14 | nC | Total Gate Charge (VDS=20V) |
| Qgs | 5.8 | nC | Gate-Source Charge | |
| Qgd | 6.5 | nC | Gate-Drain Charge | |
| Ciss | 1259 | pF | Input Capacitance (VDS=15V, VGS=0V, f=1.0MHz) | |
| Capacitance | Coss | 139 | pF | Output Capacitance |
| Crss | 93 | pF | Reverse Transfer Capacitance | |
| td(on) | 18 | ns | Turn-On Delay Time (VDs=20V, RL =20Ω, VGs=10V, RG=3.3Ω, ID=1A) | |
| tr | 11 | ns | Turn-On Rise Time | |
| Switching Time | td(off) | 50 | ns | Turn-Off Delay Time |
| tf | 6 | ns | Turn-Off Fall Time |
2007241237_MATSUKI-ME4454-G_C709759.pdf
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