Low RDS on N Channel MOSFET LRC S L2N7002SLT1G with Halogen Free Compliance and SOT 23 Package Type
Key Attributes
Model Number:
S-L2N7002SLT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2.8Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
35pF@25V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
440pC@4.5V
Mfr. Part #:
S-L2N7002SLT1G
Package:
SOT-23
Product Description
Product Overview
The L2N7002SLT1G and S-L2N7002SLT1G are N-Channel Small Signal MOSFETs designed for various electronic applications. They offer low RDS(on), ESD protection, and compliance with RoHS and Halogen Free requirements. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent site and control change requirements. These MOSFETs are ideal for use in low-side load switches, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones.
Product Attributes
- Material Compliance: RoHS and Halogen Free
- Automotive Qualification (S- prefix): AEC-Q101 qualified, PPAP capable
- Package Type: SOT-23 (TO-236)
- Brand: Leshan Radio Company, LTD.
Technical Specifications
| Parameter | Symbol | Limit | Unit | Model | Marking | Shipping |
|---|---|---|---|---|---|---|
| DrainSource Voltage | VDSS | 60 | V | L2N7002SLT1G, S-L2N7002SLT1G | 701 | 3000/Tape&Reel |
| Pulsed Drain Current (tp=10s) | IDM | 1.5 | A | L2N7002SLT1G | ||
| Pulsed Drain Current (tp=10s) | IDM | 1.0 | A | S-L2N7002SLT1G | ||
| Source Current (Body Diode) | IS | 380 | mA | L2N7002SLT1G | ||
| Source Current (Body Diode) | IS | 270 | mA | S-L2N7002SLT1G | ||
| Gate-Source Voltage | VGS | 20 | V | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Drain Current | ID | 380 | mA | L2N7002SLT1G | ||
| Drain Current | ID | 320 | mA | S-L2N7002SLT1G | ||
| Total Device Dissipation (Steady State) | PD | 420 | mW | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Total Device Dissipation (t<5s) | PD | 417 | mW | L2N7002SLT1G, S-L2N7002SLT1G | ||
| JunctiontoAmbient (Steady State) | RJA | 300 | C/W | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Junction and Storage temperature | TJ,Tstg | 55+150 | C | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) | TL | 260 | C | L2N7002SLT1G, S-L2N7002SLT1G | ||
| DrainSource Breakdown Voltage | VBRDSS | 60 | V | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Zero Gate Voltage Drain Current (TJ = 25C, VGS = 0, VDS = 60 V) | IDSS | 1.0 | A | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Zero Gate Voltage Drain Current (TJ = 125C, VGS = 0, VDS = 50 V) | IDSS | 10 | A | L2N7002SLT1G, S-L2N7002SLT1G | ||
| GateBody Leakage Current, Forward (VGS = 20 V) | IGSSF | 100 | nA | L2N7002SLT1G, S-L2N7002SLT1G | ||
| GateBody Leakage Current, Reverse (VGS = - 20 V) | IGSSR | 10 | A | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.0 | V | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) | RDS(on) | 2.8 | L2N7002SLT1G, S-L2N7002SLT1G | |||
| Static DrainSource OnState Resistance (VGS = 4.5 V, ID = 200 mA) | RDS(on) | 3.2 | L2N7002SLT1G, S-L2N7002SLT1G | |||
| Forward Transconductance (VDS = 5.0 V, ID = 200 mA) | gfs | 80 | mS | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Input Capacitance | Ciss | 71 | pF | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Output Capacitance | Coss | 35 | pF | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Reverse Transfer Capacitance | Crss | 10 | pF | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Total Gate Charge | QG(TOT) | 0.44 | nC | L2N7002SLT1G, S-L2N7002SLT1G | ||
| GateSource Charge | QGS | 0.2 | nC | L2N7002SLT1G, S-L2N7002SLT1G | ||
| GatetoDrain Charge | QGD | 0.18 | nC | L2N7002SLT1G, S-L2N7002SLT1G | ||
| Diode Forward OnVoltage (IS = 0.5A, VGS = 0 V) | VSD | 0.85 | V | L2N7002SLT1G, S-L2N7002SLT1G | ||
| ESD Rating (HBM, Method 3015) | ESD | 2000 | V | L2N7002SLT1G, S-L2N7002SLT1G |
Outline and Dimensions
SOT-23 (TO-236) Package
| DIM | MILLIMETERS | INCHES |
|---|---|---|
| A | 2.80 MAX | 0.114 MAX |
| A1 | 0.10 0.20 | 0.004 0.008 |
| b | 0.35 0.54 | 0.014 0.021 |
| c | 0.09 0.13 | 0.004 0.005 |
| D | 2.80 3.04 | 0.110 0.120 |
| E | 2.60 3.00 | 0.102 0.118 |
| E1 | 1.20 1.40 | 0.047 0.055 |
| e | 0.95 1.05 | 0.037 0.041 |
| HE | 2.10 2.64 | 0.083 0.104 |
| L | 0.35 0.55 | 0.014 0.022 |
| L1 | 0.01 0.10 | 0.0004 0.004 |
| 0 --- 10 | 0 --- 10 |
Soldering Footprint
| DIM | MILLIMETERS | INCHES |
|---|---|---|
| A | 1.78 1.90 | 0.070 0.075 |
| b | 0.35 0.45 | 0.014 0.018 |
| c | 0.15 0.25 | 0.006 0.010 |
| D | 2.80 3.00 | 0.110 0.118 |
| E | 2.60 2.80 | 0.102 0.110 |
| E1 | 1.20 1.30 | 0.047 0.051 |
| e | 0.80 0.90 | 0.031 0.035 |
| L | 0.40 0.60 | 0.016 0.024 |
| L1 | 0.10 0.20 | 0.004 0.008 |
2203301830_LRC-S-L2N7002SLT1G_C559089.pdf
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