Halogen Free Small Signal MOSFET LRC L2N7002KDW1T1G with AEC Q101 Qualification and PPAP Capability
Product Overview
The L2N7002KDW1T1G and S-L2N7002KDW1T1G are N-Channel Small Signal MOSFETs designed for automotive and general applications. They feature RoHS compliance and Halogen Free material, with the S-prefix variant offering AEC-Q101 qualification and PPAP capability for stringent automotive requirements. These devices provide ESD protection and are suitable for various switching and amplification tasks.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Automotive Qualification (S-prefix): AEC-Q101 Qualified, PPAP Capable
- ESD Protection: Yes
Technical Specifications
| Parameter | Symbol | L2N7002KDW1T1G / S-L2N7002KDW1T1G | Unit | |
|---|---|---|---|---|
| Maximum Ratings (Ta = 25C unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | 60 | Vdc | |
| Gate-Source Voltage | VGS | 20 | Vdc | |
| Drain Current - Steady State | ID | 380 | mAdc | |
| Pulsed Drain Current (tp=10s) | IDM | 1.5 | A | |
| Source Current (Body Diode) | IS | 300 | mA | |
| Total Device Dissipation (Note 1) - Steady State | PD | 380 | mW | |
| Total Device Dissipation (Note 1) - t<5s | PD | 10000/Tape&Reel | / | |
| JunctiontoAmbient (Note 1) - Steady State | RJA | 300 | C/W | |
| JunctiontoAmbient (Note 1) - t<5s | RJA | 417 | C/W | |
| Junction and Storage Temperature | TJ, Tstg | -55 ~ +150 | C | |
| Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) | TL | 300 | C | |
| GateSource ESD Rating (HBM, Method 3015) | ESD | 2000 | V | |
| GateSource ESD Rating (Method 3015) | ESD | 300 | V | |
| Electrical Characteristics (Ta= 25C unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage (VGS = 0, ID = 250Adc) | VBRDSS | 60 | Vdc | |
| Drain-Source Breakdown Voltage Temperature Coefficient | VBRDSS/TJ | - | mV/C | |
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25C | IDSS | 100 | Adc | |
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 50 Vdc) TJ = 125C | IDSS | 500 | Adc | |
| GateBody Leakage Current, Forward (VGS = 20 Vdc) | IGSSF | - | Adc | |
| GateBody Leakage Current, Reverse (VGS = - 20 Vdc) | IGSSR | -10 | Adc | |
| Gate Threshold Voltage (VDS = VGS, ID = 250Adc) | VGS(th) | 1.0 | Vdc | |
| Gate Threshold Voltage Temperature Coefficient | VGS(TH)/TJ | -4 | mV/C | |
| Static Drain-Source On-State Resistance (VGS = 10 Vdc, ID = 500 mAdc) | RDS(on) | 2.3 | ||
| Static Drain-Source On-State Resistance (VGS = 5.0 Vdc, ID = 50 mAdc) | RDS(on) | 2.7 | ||
| Forward Transconductance (VDS = 5.0 Vdc, ID = 200 mAdc) | gfs | 80 | mS | |
| Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Ciss | 34 | pF | |
| Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Coss | 3.2 | pF | |
| Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) | Crss | 2.2 | pF | |
| Turn-On Delay Time | td(on) | - | ns | |
| Rise Time | tr | - | ns | |
| Turn-Off Delay Time | td(off) | - | ns | |
| Fall Time | tf | - | ns | |
| Diode Forward On-Voltage (IS = 115 mAdc, VGS = 0) TJ = 25C | VSD | 0.7 | Vdc | |
| Device Marking and Ordering Information | ||||
| Model | Marking | Shipping | Quantity | |
| L2N7002KDW1T1G | 72K | Tape&Reel | 10000 | |
| L2N7002KDW1T3G | 72K | Tape&Reel | 3000 | |
| S-L2N7002KDW1T1G | 72K | Tape&Reel | 10000 | |
| Outline and Dimensions (SC88/SOT-363) | ||||
| Dimension | Symbol | Min (mm) | Nom (mm) | Max (mm) |
| Body | D | 1.80 | 2.00 | 2.10 |
| Body | E | 1.15 | 1.25 | 1.35 |
| Height | A | 0.70 | - | 0.90 |
| Lead Thickness | b | 0.15 | - | 0.25 |
| Lead Width | c | 0.10 | - | 0.15 |
| Pitch | e | 0.65 BSC | - | - |
| Overall Height | L | 0.26 | - | 0.46 |
| Lead Length | L2 | 0.15 BSC | - | - |
| Body Width | E1 | 1.80 | 2.00 | 2.20 |
| Body Length | D2 | 1.80 | 2.00 | 2.20 |
| Body Height | A1 | 0.00 | - | 0.10 |
2101281834_LRC-L2N7002KDW1T1G_C967442.pdf
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