Halogen Free Small Signal MOSFET LRC L2N7002KDW1T1G with AEC Q101 Qualification and PPAP Capability

Key Attributes
Model Number: L2N7002KDW1T1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
2 N-Channel
Output Capacitance(Coss):
3pF
Input Capacitance(Ciss):
34pF@25V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
L2N7002KDW1T1G
Package:
SC-88
Product Description

Product Overview

The L2N7002KDW1T1G and S-L2N7002KDW1T1G are N-Channel Small Signal MOSFETs designed for automotive and general applications. They feature RoHS compliance and Halogen Free material, with the S-prefix variant offering AEC-Q101 qualification and PPAP capability for stringent automotive requirements. These devices provide ESD protection and are suitable for various switching and amplification tasks.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Automotive Qualification (S-prefix): AEC-Q101 Qualified, PPAP Capable
  • ESD Protection: Yes

Technical Specifications

Parameter Symbol L2N7002KDW1T1G / S-L2N7002KDW1T1G Unit
Maximum Ratings (Ta = 25C unless otherwise noted)
Drain-Source Voltage VDSS 60 Vdc
Gate-Source Voltage VGS 20 Vdc
Drain Current - Steady State ID 380 mAdc
Pulsed Drain Current (tp=10s) IDM 1.5 A
Source Current (Body Diode) IS 300 mA
Total Device Dissipation (Note 1) - Steady State PD 380 mW
Total Device Dissipation (Note 1) - t<5s PD 10000/Tape&Reel /
JunctiontoAmbient (Note 1) - Steady State RJA 300 C/W
JunctiontoAmbient (Note 1) - t<5s RJA 417 C/W
Junction and Storage Temperature TJ, Tstg -55 ~ +150 C
Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) TL 300 C
GateSource ESD Rating (HBM, Method 3015) ESD 2000 V
GateSource ESD Rating (Method 3015) ESD 300 V
Electrical Characteristics (Ta= 25C unless otherwise noted)
Drain-Source Breakdown Voltage (VGS = 0, ID = 250Adc) VBRDSS 60 Vdc
Drain-Source Breakdown Voltage Temperature Coefficient VBRDSS/TJ - mV/C
Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25C IDSS 100 Adc
Zero Gate Voltage Drain Current (VGS = 0, VDS = 50 Vdc) TJ = 125C IDSS 500 Adc
GateBody Leakage Current, Forward (VGS = 20 Vdc) IGSSF - Adc
GateBody Leakage Current, Reverse (VGS = - 20 Vdc) IGSSR -10 Adc
Gate Threshold Voltage (VDS = VGS, ID = 250Adc) VGS(th) 1.0 Vdc
Gate Threshold Voltage Temperature Coefficient VGS(TH)/TJ -4 mV/C
Static Drain-Source On-State Resistance (VGS = 10 Vdc, ID = 500 mAdc) RDS(on) 2.3
Static Drain-Source On-State Resistance (VGS = 5.0 Vdc, ID = 50 mAdc) RDS(on) 2.7
Forward Transconductance (VDS = 5.0 Vdc, ID = 200 mAdc) gfs 80 mS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss 34 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss 3.2 pF
Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss 2.2 pF
Turn-On Delay Time td(on) - ns
Rise Time tr - ns
Turn-Off Delay Time td(off) - ns
Fall Time tf - ns
Diode Forward On-Voltage (IS = 115 mAdc, VGS = 0) TJ = 25C VSD 0.7 Vdc
Device Marking and Ordering Information
Model Marking Shipping Quantity
L2N7002KDW1T1G 72K Tape&Reel 10000
L2N7002KDW1T3G 72K Tape&Reel 3000
S-L2N7002KDW1T1G 72K Tape&Reel 10000
Outline and Dimensions (SC88/SOT-363)
Dimension Symbol Min (mm) Nom (mm) Max (mm)
Body D 1.80 2.00 2.10
Body E 1.15 1.25 1.35
Height A 0.70 - 0.90
Lead Thickness b 0.15 - 0.25
Lead Width c 0.10 - 0.15
Pitch e 0.65 BSC - -
Overall Height L 0.26 - 0.46
Lead Length L2 0.15 BSC - -
Body Width E1 1.80 2.00 2.20
Body Length D2 1.80 2.00 2.20
Body Height A1 0.00 - 0.10

2101281834_LRC-L2N7002KDW1T1G_C967442.pdf

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