N Channel Power MOSFET Featuring High Cell Density DMOS Trench Technology MATSUKI ME4626 for Switching
Key Attributes
Model Number:
ME4626
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
21A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2.8mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
220pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
5.73nF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
62nC@4.5V
Mfr. Part #:
ME4626
Package:
SOP-8
Product Description
Product Overview
The ME4626/ME4626-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package. Key features include extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Matsuki (implied by datasheet)
- Product Variants: ME4626 (Pb-free), ME4626-G (Green product-Halogen free)
- Certifications: Halogen free (for ME4626-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current (TJ =150)* TA=25 | ID | 21 | A | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Continuous Drain Current (TJ =150)* TA=70 | ID | 16.9 | A | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Pulsed Drain Current | IDM | 84 | A | |
| Maximum Power Dissipation* TA=25 | PD | 2.5 | W | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Maximum Power Dissipation* TA=70 | PD | 1.6 | W | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient* | RθJA | 50 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Thermal Resistance-Junction to Lead* | RθJL | 24 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA |
| Gate Threshold Voltage | VGS(th) | 1 to 3 | V | VDS=VGS, ID=250μA |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 2.8 to 3.5 | mΩ | VGS=10V, ID=15A, a |
| Drain-Source On-State Resistance | RDS(ON) | 3.3 to 4.5 | mΩ | VGS=4.5V, ID=10A, a |
| Diode Forward Voltage | VSD | 0.8 to 1.2 | V | IS=15A, VGS=0V |
| Dynamic Characteristics (TJ =25 Noted) | ||||
| Total Gate Charge (4.5V) | Qg | 62 | nC | VDS=15V, VGS=4.5V, ID=15A |
| Total Gate Charge (10V) | Qg | 128 | nC | VDS=15V, VGS=10V, ID=15A |
| Gate-Source Charge | Qgs | 18 | nC | |
| Gate-Drain Charge | Qgd | 27 | nC | |
| Input Capacitance | Ciss | 5730 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 660 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 220 | pF | VDS=15V, VGS=0V, f=1.0MHz |
| Gate Resistance | Rg | 0.9 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 33 | ns | VDD=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω |
| Turn-On Rise Time | tr | 20 | ns | VDD=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω |
| Turn-Off Delay Time | td(off) | 110 | ns | VDD=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω |
| Turn-Off Fall Time | tf | 17 | ns | VDD=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω |
2410121643_MATSUKI-ME4626_C709737.pdf
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